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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 3 — Feb. 1, 2010
  • pp: 2940–2945

Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab

Yongjin Wang, Fangren Hu, Yoshiaki Kanamori, Hidehisa Sameshima, and Kazuhiro Hane  »View Author Affiliations


Optics Express, Vol. 18, Issue 3, pp. 2940-2945 (2010)
http://dx.doi.org/10.1364/OE.18.002940


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Abstract

We develop a novel way to fabricate subwavelength nanostructures on the freestanding GaN slab using a GaN-on-silicon system by combining self-assemble technique and backside thinning method. Silicon substrate beneath the GaN slab is removed by bulk silicon micromachining, generating the freestanding GaN slab and eliminating silicon absorption of the emitted light. Fast atom beam (FAB) etching is conducted to thin the freestanding GaN slab from the backside, reducing the number of confined modes inside the GaN slab. With self-assembled silica nanospheres acting as an etching mask, subwavelength nanostructures are realized on the GaN surface by FAB etching. The reflection losses at the GaN interfaces are thus suppressed. When the InGaN/GaN multiple quantum wells (MQWs) active layers are excited, the light extraction efficiency is significantly improved for the freestanding nanostructured GaN slab. This work provides a very practical approach to fabricate freestanding nanostructures on the GaN-on-silicon system for further improving the light extraction efficiency.

© 2010 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Materials

History
Original Manuscript: November 4, 2009
Revised Manuscript: December 16, 2009
Manuscript Accepted: December 18, 2009
Published: January 27, 2010

Citation
Yongjin Wang, Fangren Hu, Yoshiaki Kanamori, Hidehisa Sameshima, and Kazuhiro Hane, "Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab," Opt. Express 18, 2940-2945 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-3-2940


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References

  1. M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. George Craford, “Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting,” J. Display Technol. 3(2), 160–175 (2007). [CrossRef]
  2. T.-X. Lee, K.-F. Gao, W.-T. Chien, and C.-C. Sun, “Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate,” Opt. Express 15(11), 6670–6676 (2007). [CrossRef] [PubMed]
  3. J.-M. Bethoux, P. Vennéguès, F. Natali, E. Feltin, O. Tottereau, G. Nataf, P. De Mierry, and F. Semond, “Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks,” J. Appl. Phys. 94(10), 6499 (2003). [CrossRef]
  4. F. Schulze, A. Dadgar, J. Bläsing, A. Diez, and A. Krost, “Metalorganic vapor phase epitaxy grown InGaN/GaN light-emitting diodes on Si(001) substrate,” Appl. Phys. Lett. 88(12), 121114 (2006). [CrossRef]
  5. H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, and S. J. Chua, “Lasing in GaN microdisks pivoted on Si,” Appl. Phys. Lett. 89(21), 211101 (2006). [CrossRef]
  6. S. Tripathy, V. K. X. Lin, S. L. Teo, A. Dadgar, A. Diez, J. Bläsing, and A. Krost, “InGaN/GaN light emitting diodes on nanoscale silicon on insulator,” Appl. Phys. Lett. 91(23), 231109 (2007). [CrossRef]
  7. Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique,” Appl. Phys. Lett. 88(4), 041913 (2006). [CrossRef]
  8. T. Zimmermann, M. Neuburger, P. Benkart, F. J. Hernández-Guillén, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar, A. Krost, and E. Kohn, “Piezoelectric GaN Sensor Structures,” IEEE Electron Device Lett. 27(5), 309–312 (2006). [CrossRef]
  9. A. Rosenberg, K. Bussmann, M. Kim, M. W. Carter, M. A. Mastro, R. T. Holm, R. L. Henry, J. D. Caldwell, and C. R. Eddy, Jr., “Fabrication of GaN suspended photonic crystal slabs and resonant nanocavities on Si(111),” J. Vac. Sci. Technol. B 25(3), 721 (2007). [CrossRef]
  10. V. Cimalla, J. Pezoldt, and O. Ambacher, “Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications,” J. Phys. D: Appl. Phys. 40(20), 6386–6434 (2007). [CrossRef]
  11. S. Noda and M. Fujita, “Light-emitting diodes: photonic crystal efficiency boost,” Nat. Photonics 3(3), 129–130 (2009). [CrossRef]
  12. S. J. An, J. H. Chae, G.-C. Yi, and G. H. Park, “Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays,” Appl. Phys. Lett. 92(12), 121108 (2008). [CrossRef]
  13. H. K. Cho, J. Jang, J.-H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express 14(19), 8654–8660 (2006). [CrossRef] [PubMed]
  14. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16), 2174 (1993). [CrossRef]
  15. C. H. Chiu, P. Yu, H. C. Kuo, C. C. Chen, T. C. Lu, S. C. Wang, S. H. Hsu, Y. J. Cheng, and Y. C. Chang, “Broadband and omnidirectional antireflection employing disordered GaN nanopillars,” Opt. Express 16(12), 8748–8754 (2008). [CrossRef] [PubMed]
  16. W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, “Photonic crystal light-emitting diodes fabricated by microsphere lithography,” Nanotechnology 19(25), 255302 (2008). [CrossRef] [PubMed]
  17. C.-H. Chan, C.-H. Hou, C.-K. Huang, T.-J. Chen, S.-Z. Tseng, H.-T. Chien, C.-H. Kuo, K.-H. Hsieh, Y.-L. Tsai, K.-C. Hsu, and C.-C. Chen, “Patterning periodical Motif on substrates using monolayer of microspheres: application in GaN light-emitting diodes,” Jpn. J. Appl. Phys. 48(2), 020212 (2009). [CrossRef]
  18. J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009). [CrossRef]
  19. T. Ono, N. Orimoto, S. Lee, T. Simizu, and M. Esashi, “RF-plasma-assisted fast atom beam etching,” Jpn. J. Appl. Phys. 39(Part 1, No. 12B), 6976–6979 (2000). [CrossRef]
  20. F. R. Hu, K. Ochi, Y. Zhao, and K. Hane, “High-efficiency light-emitting column-crystallized InGaN/GaN quantum-well flower structure on micropillared Si substrate,” Appl. Phys. Lett. 89(17), 171903 (2006). [CrossRef]
  21. F. R. Hu, Y. Kanamori, K. Ochi, Y. Zhao, M. Wakui, and K. Hane, “A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining,” Nanotechnology 19(3), 035305 (2008). [CrossRef] [PubMed]
  22. Y. Wang, F. Hu, H. Sameshima, and K. Hane, “Fabrication and characterization of freestanding circular GaN gratings,” accepted by Opt. Express.
  23. Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding GaN resonant gratings at telecommunication range,” IEEE Photon. Technol. Lett. 21(17), 1184–1186 (2009). [CrossRef]
  24. Y. Wang, F. Hu, M. Wakui, and K. Hane, “Freestanding circular GaN grating fabricated by fast-atom beam etching,” Appl. Phys., A Mater. Sci. Process. 97(1), 39–43 (2009). [CrossRef]
  25. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006). [CrossRef]
  26. Y.-F. Huang, S. Chattopadhyay, Y.-J. Jen, C.-Y. Peng, T.-A. Liu, Y.-K. Hsu, C.-L. Pan, H.-C. Lo, C.-H. Hsu, Y.-H. Chang, C.-S. Lee, K.-H. Chen, and L.-C. Chen, “Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures,” Nat. Nanotechnol. 2(12), 770–774 (2007). [CrossRef]

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