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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 5466–5471

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

Jun Ho Son and Jong-Lam Lee  »View Author Affiliations


Optics Express, Vol. 18, Issue 6, pp. 5466-5471 (2010)
http://dx.doi.org/10.1364/OE.18.005466


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Abstract

We present a method of increasing light output power and suppressing efficiency droop in vertical-structure InGaN/GaN MQW LEDs without modifying their epitaxial layers. These improvements are achieved by reducing the quantum-confined Stark effect (QCSE) by reducing piezoelectric polarization that results from compressive stress in the GaN epilayer. This compressive stress is relaxed due to the external stress induced by an electro-plated Ni metal substrate. In simulations, the severe band bending in the InGaN quantum well is reduced and subsequently internal quantum efficiency increases as the piezoelectric polarization is reduced.

© 2010 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: February 2, 2010
Revised Manuscript: February 22, 2010
Manuscript Accepted: February 26, 2010
Published: March 2, 2010

Virtual Issues
Focus Issue: Solar Concentrators (2010) Optics Express

Citation
Jun Ho Son and Jong-Lam Lee, "Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes," Opt. Express 18, 5466-5471 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-6-5466


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References

  1. S. Nakamura, “Current status of GaN-based solid-state lighting,” MRS Bull. 34, 101–107 (2009). [CrossRef]
  2. J. K. Kim and E. F. Schubert, “Transcending the replacement paradigm of solid-state lighting,” Opt. Express 16(26), 21835–21842 (2008), http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-16-26-21835 . [CrossRef] [PubMed]
  3. N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, “Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2,” Appl. Phys. Lett. 91(24), 243506 (2007). [CrossRef]
  4. J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, and Y. Park, “Reduction in efficiency droop in polarization matched GaInN/GaInN LEDs,” Appl. Phys. Lett. 94, 011113 (2009). [CrossRef]
  5. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization matched GaInN/AlGaInN multi-quantum-well light emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93, 041102 (2008). [CrossRef]
  6. B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett. 91(18), 181103 (2007). [CrossRef]
  7. J. Xie, X. Ni, Q. Fan, R. Shimada, U. Ozgur, and H. Morkoc, “On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers,” Appl. Phys. Lett. 93(12), 121107 (2008). [CrossRef]
  8. J. S. Speck and S. F. Chichibu, “Nonpolar and semipolar group III nitride-based materials,” MRS Bull. 34, 304 (2009). [CrossRef]
  9. Y.-D. Lin, A. Chakraborty, S. Brinkley, H. C. Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Characterization of blue-green m-plane InGaN light emitting diodes,” Appl. Phys. Lett. 94(26), 261108 (2009). [CrossRef]
  10. H. Zhong, A. Tyagi, N. N. Fellow, F. Wu, R. B. Chung, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High power and high efficiency blue light emitting diode on freestanding semipolar (10-1-1) bulk GaN substrate,” Appl. Phys. Lett. 90(23), 233504 (2007). [CrossRef]
  11. D. G. Zhao, S. J. Xu, M. H. Xie, S. Y. Yong, and H. Yang, “Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire,” Appl. Phys. Lett. 83(4), 677 (2003). [CrossRef]
  12. S. F. LeBoeuf, M. E. Aumer, and S. M. Bedair, “Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells,” Appl. Phys. Lett. 77(1), 97 (2000). [CrossRef]
  13. M. E. Aumer, S. F. LeBoeuf, S. M. Bedair, M. Smith, J. Y. Lin, and H. X. Jiang, “Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures,” Appl. Phys. Lett. 77(6), 821 (2000). [CrossRef]
  14. A. Dadgar, C. Hums, A. Diez, J. Bläsing, and A. Krost, “Growth of blue GaN LED structures on 50-mm Si(111),” J. Cryst. Growth 297(2), 279–282 (2006). [CrossRef]
  15. A. Krost, A. Dadgar, F. Schulze, J. Bläsing, G. Strassburger, R. Clos, A. Diez, P. Veit, T. Hempel, and J. Christen, “In situ monitoring of the stress evolution in growing group-III-nitride layers,” J. Cryst. Growth 275(1-2), 209–216 (2005). [CrossRef]
  16. SiLENse Physics Summary, http://www.semitech.us/products/SiLENse/
  17. X. Shao, H. Lu, D. Chen, Z. Xie, R. Zhang, and Y. Zheng, “Efficiency droop behavior of direct current aged GaN-based blue light-emitting diodes,” Appl. Phys. Lett. 95(16), 163504 (2009). [CrossRef]

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