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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 5466–5471

Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes

Jun Ho Son and Jong-Lam Lee  »View Author Affiliations

Optics Express, Vol. 18, Issue 6, pp. 5466-5471 (2010)

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We present a method of increasing light output power and suppressing efficiency droop in vertical-structure InGaN/GaN MQW LEDs without modifying their epitaxial layers. These improvements are achieved by reducing the quantum-confined Stark effect (QCSE) by reducing piezoelectric polarization that results from compressive stress in the GaN epilayer. This compressive stress is relaxed due to the external stress induced by an electro-plated Ni metal substrate. In simulations, the severe band bending in the InGaN quantum well is reduced and subsequently internal quantum efficiency increases as the piezoelectric polarization is reduced.

© 2010 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: February 2, 2010
Revised Manuscript: February 22, 2010
Manuscript Accepted: February 26, 2010
Published: March 2, 2010

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Focus Issue: Solar Concentrators (2010) Optics Express

Jun Ho Son and Jong-Lam Lee, "Strain engineering for the solution of efficiency droop in InGaN/GaN light-emitting diodes," Opt. Express 18, 5466-5471 (2010)

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