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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 5504–5511

Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure

Yongjin Wang, Fangren Hu, Yoshiaki Kanamori, Tong Wu, and Kazuhiro Hane  »View Author Affiliations

Optics Express, Vol. 18, Issue 6, pp. 5504-5511 (2010)

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We propose, fabricate and characterize the freestanding GaN nanocolumn membrane with bottom subwavelength nanostructures. The GaN nanocolumns are epitaxially grown on freestanding nanostructured silicon substrate that is achieved by a combination of self-assemble technique and silicon-on-insulator (SOI) technology. Optical reflection is greatly suppressed in the visible range due to the graded refractive index effect of subwavelength nanostructures. The freestanding GaN nanocolumn membrane is realized by removing silicon substrate from the backside, eliminating the silicon absorption of the emitted light and leading to a strong blue emission from the bottom side. The obtained structures also demonstrate the potential application for anti-reflective (AR) coating and GaN-Si hybrid microelectromechanical system (MEMS).

© 2010 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Thin Films

Original Manuscript: December 4, 2009
Revised Manuscript: February 22, 2010
Manuscript Accepted: February 23, 2010
Published: March 3, 2010

Yongjin Wang, Fangren Hu, Yoshiaki Kanamori, Tong Wu, and Kazuhiro Hane, "Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure," Opt. Express 18, 5504-5511 (2010)

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