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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 6 — Mar. 15, 2010
  • pp: 6333–6339

Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO3:Zr,Cu,Ce

Fucai Liu, Yongfa Kong, Xinyu Ge, Hongde Liu, Shiguo Liu, Shaolin Chen, Romano Rupp, and Jingjun Xu  »View Author Affiliations

Optics Express, Vol. 18, Issue 6, pp. 6333-6339 (2010)

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We have designed and grown triply doped LiNbO3:Zr,Cu,Ce crystal and investigated its characteristics of nonvolatile holographic storage. It’s observed that the photorefractive sensitivity of LiNbO3:Zr,Cu,Ce has improved to 0.099 cm/J, which is about one order of magnitude larger than that of congruent LiNbO3:Cu,Ce. And LiNbO3:Zr,Cu,Ce also has high suppression to light-induced scattering. Our results indicated that triply doped LiNbO3:Zr,Cu,Ce is an excellent candidate for nonvolatile holographic data storage.

© 2010 OSA

OCIS Codes
(090.2900) Holography : Optical storage materials
(160.3730) Materials : Lithium niobate
(210.2860) Optical data storage : Holographic and volume memories

ToC Category:
Optical Data Storage

Original Manuscript: November 23, 2009
Revised Manuscript: January 31, 2010
Manuscript Accepted: February 5, 2010
Published: March 12, 2010

Fucai Liu, Yongfa Kong, Xinyu Ge, Hongde Liu, Shiguo Liu, Shaolin Chen, Romano Rupp, and Jingjun Xu, "Improved sensitivity of nonvolatile holographic storage in triply doped LiNbO3:Zr,Cu,Ce," Opt. Express 18, 6333-6339 (2010)

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