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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 7 — Mar. 29, 2010
  • pp: 7243–7252

Lateral leakage of TM-like mode in thin-ridge Silicon-on-Insulator bent waveguides and ring resonators

Thach G. Nguyen, Ravi S. Tummidi, Thomas L. Koch, and Arnan Mitchell  »View Author Affiliations

Optics Express, Vol. 18, Issue 7, pp. 7243-7252 (2010)

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We present the first prediction of lateral leakage behavior of the TM-like mode in thin-ridge SOI curved waveguides and ring resonators. A simple phenomenological model is first presented which predicts that the lateral leakage in these structures is significantly impacted by both the ring radius and waveguide width. This prediction is verified using full vectorial mode matching and finite element methods. We show that specific combinations of waveguide width and ring radius can lead to very low-loss propagation in the TM-like mode. This finding is critical for the design of high-Q resonators on such waveguide platforms and will have major impact on the field of silicon lasers and sensing applications.

© 2010 Optical Society of America

OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices

ToC Category:
Integrated Optics

Original Manuscript: December 17, 2009
Revised Manuscript: February 20, 2010
Manuscript Accepted: March 2, 2010
Published: March 24, 2010

Thach G. Nguyen, Ravi S. Tummidi, Thomas L. Koch, and Arnan Mitchell, "Lateral leakage of TM-like mode in thin-ridge Silicon-on-Insulator bent waveguides and ring resonators," Opt. Express 18, 7243-7252 (2010)

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