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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 7 — Mar. 29, 2010
  • pp: 7269–7280

Reflectometer-based metrology for high-aspect ratio via measurement

Yi-Sha Ku and Fu Shiang Yang  »View Author Affiliations


Optics Express, Vol. 18, Issue 7, pp. 7269-7280 (2010)
http://dx.doi.org/10.1364/OE.18.007269


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Abstract

We develop a modified thin film model with adjustable ratio of the illuminated surface areas for accurate reflectivity calculation of deep via structures. We also propose a method combining a half oblate spheroid model and a reflectance modulation algorithm for extraction of via bottom profile from the measured reflectance spectrum. We demonstrate the use and enhancement of an existing wafer metrology tool, spectral reflectometer by implementing novel theoretical model and measurement algorithm for through-silicon via (TSV) inspection. Our non-destructive solution can measure TSV profile diameters as small as 5 μm and aspect ratios greater than 13:1. The measurement precision is in the range of 0.02 μm. Metrology results from actual 3D interconnect processing wafers are presented.

© 2010 OSA

OCIS Codes
(120.3940) Instrumentation, measurement, and metrology : Metrology
(300.6550) Spectroscopy : Spectroscopy, visible

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: January 8, 2010
Revised Manuscript: March 7, 2010
Manuscript Accepted: March 22, 2010
Published: March 24, 2010

Citation
Yi-Sha Ku and Fu Shiang Yang, "Reflectometer-based metrology for high-aspect ratio via measurement," Opt. Express 18, 7269-7280 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-7-7269


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References

  1. ITRS Assembly & Packaging 2008.
  2. P. de Groot and X. C. de Lega, “Valve cone measurement using white light interference microscopy in a spherical measurement geometry,” Opt. Eng. 42(5), 1232 (2003). [CrossRef]
  3. J. H. Belk, and D. E. Hulsey, “ Non-contact hole depth gage”, US patent 2003/0107728 A1.
  4. D. Marx, D. Grant, R. Dudley, A. Rudack, and W. H. Teh, “Wafer Thickness Sensor (WTS) for Etched Depth Measurement of TSV,” IWLPC-International Wafer-level packaging conference proceeding (2009).
  5. Z. Liu, X. Zhang, J. Hu, and D. J. Roy, “Measurement of deep silicon trench profile using normal incidence optical CD metrology,” Proc. SPIE 5752, 1152–1160 (2005). [CrossRef]
  6. C. A. Duran, A. A. Maznev, G. T. Merklin, A. Mazurenko, and M. Gostein, “Infrared Reflectometry for Metrology of Trenches in Power Devices,” IEEE/SEMI Advanced Semiconductor Manufacturing Conference, p. 175, (2007).
  7. C. J. Raymond, M. Littau, R. Markle, and M. Purdy, “Scatterometry for shallow trench isolation (STI) process metrology,” Proc. SPIE 4344, 716–725 (2001). [CrossRef]
  8. M. Horie, S. Shiota, S. Yamaguchi, and ., “UV-reflectometry for fast trench-depth measurement,” Proc. SPIE 6922, 69223D (2008). [CrossRef]
  9. S. Yamaguchi, and M. Horie, “Measuring Method and Apparatus for Measuring Depth of Trench Pattern,” US patent 2008/0049222 A1.
  10. B. Chao, Z. Chun, H. Low, H. L. Lee, S. Y. Loong, and G. Guo, “Via electromigration improvement by changing the via bottom geometric profile,” US patent 7045455B2.
  11. K. K. Kirby, “Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such method,” US patent 7271482.
  12. A. Kadyshevitch, C. Talbot, D. Shur, and A. G. Hegedus, “Contact Opening Metrology,” US patent 2007/0257191 A1.

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