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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 9 — Apr. 26, 2010
  • pp: 8916–8922

Broadband external cavity tunable quantum dot lasers with low injection current density

X. Q. Lv, P. Jin, W. Y. Wang, and Z. G. Wang  »View Author Affiliations


Optics Express, Vol. 18, Issue 9, pp. 8916-8922 (2010)
http://dx.doi.org/10.1364/OE.18.008916


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Abstract

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm2). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to ~150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

© 2010 OSA

OCIS Codes
(140.3410) Lasers and laser optics : Laser resonators
(140.3600) Lasers and laser optics : Lasers, tunable
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 15, 2009
Revised Manuscript: March 19, 2010
Manuscript Accepted: April 1, 2010
Published: April 14, 2010

Citation
X. Q. Lv, P. Jin, W. Y. Wang, and Z. G. Wang, "Broadband external cavity tunable quantum dot lasers with low injection current density," Opt. Express 18, 8916-8922 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-9-8916


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