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Energy Express

Energy Express

  • Editor: Bernard Kippelen
  • Vol. 18, Iss. S3 — Sep. 13, 2010
  • pp: A403–A410

MgO nano-pyramids structure for enhancement of light extraction efficiency in vertical light-emitting diodes

Jun Ho Son, Hak Ki Yu, and Jong-Lam Lee  »View Author Affiliations


Optics Express, Vol. 18, Issue S3, pp. A403-A410 (2010)
http://dx.doi.org/10.1364/OE.18.00A403


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Abstract

We demonstrate novel method for improving light extraction efficiency for n-side-up vertical InGaN/GaN light-emitting diodes (V-LEDs) using MgO nano-pyramids and ZnO refractive-index modulation layer. The MgO nano-pyramids structure is successfully fabricated on n-GaN/ZnO surface using electron-beam evaporation. The light output power of n-GaN/ZnO/MgO V-LEDs is enhanced by 49% compare to that of n-GaN V-LEDs. The angular-dependent far-field emission shows the significant increase of side emission for the n-GaN/ZnO/MgO V-LEDs due to the increase of critical angle for total internal reflection as well as the roughened surface by MgO pyramids structure. These experimental results indicate the critical role of surface texturing in improving the light extraction efficiency of the V-LEDs for solid-state lighting.

© 2010 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: June 16, 2010
Revised Manuscript: August 12, 2010
Manuscript Accepted: August 12, 2010
Published: August 19, 2010

Citation
Jun Ho Son, Hak Ki Yu, and Jong-Lam Lee, "MgO nano-pyramids structure for enhancement of light extraction efficiency in vertical light-emitting diodes," Opt. Express 18, A403-A410 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-S3-A403


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