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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 18, Iss. S4 — Nov. 8, 2010
  • pp: A562–A567

InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film

Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai  »View Author Affiliations


Optics Express, Vol. 18, Issue S4, pp. A562-A567 (2010)
http://dx.doi.org/10.1364/OE.18.00A562


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Abstract

In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO2 mask layer was patterned on a heavily doped n-GaN template layer rather than on a sapphire substrate. As a result, the periphery of the LED included several OSFs around the regrown GaN mesa. While processing the device, dry etching was unnecessary for exposing the n-GaN underlying layer in order to form the n-type Ohmic contacts. This could be attributed to the fact that the n-GaN template layer with an electron concentration of around 8 × 1018/cm3 was exposed after the removal of the SiO2 mask layer. With an injection current of 20 mA, GaN-based LEDs with OSFs exhibited a 21% enhancement in light output compared with those that have vertical sidewall facets. The enhancement is attributed to the fact that photons extracted from OSFs can reduce internal absorption loss.

© 2010 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: August 31, 2010
Revised Manuscript: September 29, 2010
Manuscript Accepted: September 30, 2010
Published: October 11, 2010

Citation
Jinn-Kong Sheu, Kuo-Hua Chang, Shang-Ju Tu, Ming-Lun Lee, Chih-Ciao Yang, Che-Kang Hsu, and Wei-Chih Lai, "InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO2 patterned GaN film," Opt. Express 18, A562-A567 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-S4-A562


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