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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 10 — May. 9, 2011
  • pp: 9221–9231

Hybrid III-V semiconductor/silicon nanolaser

Y. Halioua, A. Bazin, P. Monnier, T. J. Karle, G. Roelkens, I. Sagnes, R. Raj, and F. Raineri  »View Author Affiliations


Optics Express, Vol. 19, Issue 10, pp. 9221-9231 (2011)
http://dx.doi.org/10.1364/OE.19.009221


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Abstract

Heterogeneous integration of III-V compound semiconductors on Silicon on Insulator is one the key technology for next-generation on-chip optical interconnects. In this context, the use of photonic crystals lasers represents a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry. Using a subjacent Silicon-On-Insulator waveguide, the emitted light from a photonic crystal based cavity laser is efficiently captured. We study experimentally the evanescent wave coupling responsible for the funneling of the emitted light into the silicon waveguide mode as a function of the hybrid structure parameters, showing that 90% of coupling efficiency is possible.

© 2011 OSA

OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(230.5298) Optical devices : Photonic crystals

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: March 18, 2011
Revised Manuscript: April 19, 2011
Manuscript Accepted: April 19, 2011
Published: April 26, 2011

Citation
Y. Halioua, A. Bazin, P. Monnier, T. J. Karle, G. Roelkens, I. Sagnes, R. Raj, and F. Raineri, "Hybrid III-V semiconductor/silicon nanolaser," Opt. Express 19, 9221-9231 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-10-9221


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