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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 12 — Jun. 6, 2011
  • pp: 11568–11577

Drive-noise-tolerant broadband silicon electro-optic switch

Joris Van Campenhout, William M. J. Green, Solomon Assefa, and Yurii A. Vlasov  »View Author Affiliations

Optics Express, Vol. 19, Issue 12, pp. 11568-11577 (2011)

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We report a broadband digital electro-optical switch, based upon a multi-stage Mach-Zehnder lattice design in silicon-on-insulator. A digital switching response is demonstrated, engineered through apodization of the coupling coefficients between stages. The digital switching behavior results in crosstalk lower than −15 dB for drive-voltage noise levels in excess of 300 mVpp, which exceeds the noise tolerance of a conventional single-stage Mach-Zehnder switch by more than six-fold. In addition, the digital design enables a larger maximum ‘on’-state extinction (below −26 dB) and lower ‘on’-state free-carrier-induced insertion loss (less than 0.45 dB) than that of the single-stage switch. The noise-tolerant, low-crosstalk switch can thus play a key role within CMOS-integrated reconfigurable optical networks operating under noisy on-chip conditions.

© 2011 OSA

OCIS Codes
(130.4815) Integrated optics : Optical switching devices
(250.6715) Optoelectronics : Switching

ToC Category:
Integrated Optics

Original Manuscript: April 8, 2011
Revised Manuscript: May 22, 2011
Manuscript Accepted: May 26, 2011
Published: May 31, 2011

Joris Van Campenhout, William M. J. Green, Solomon Assefa, and Yurii A. Vlasov, "Drive-noise-tolerant broadband silicon electro-optic switch," Opt. Express 19, 11568-11577 (2011)

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  1. W. M. J. Green, S. Assefa, A. Rylyakov, C. Schow, F. Horst, and Y. A. Vlasov, “CMOS integrated silicon nanophotonics: enabling technology for exascale computational systems,” presented at SEMICON 2010, Chiba, Japan, 1–3 December, 2010.
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