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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 14 — Jul. 4, 2011
  • pp: 13692–13699

Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing

Siddharth R. Jain, Matthew N. Sysak, Geza Kurczveil, and John E. Bowers  »View Author Affiliations

Optics Express, Vol. 19, Issue 14, pp. 13692-13699 (2011)

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We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap for modulation. The multi-channel DFB array includes 13 lasers with >90 nm gain-bandwidth. The transponder includes four DFB-EAMs with14 dB DC extinction at 4 V bias.

© 2011 OSA

OCIS Codes
(140.2010) Lasers and laser optics : Diode laser arrays
(230.4110) Optical devices : Modulators

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 14, 2011
Revised Manuscript: May 27, 2011
Manuscript Accepted: May 31, 2011
Published: June 30, 2011

Siddharth R. Jain, Matthew N. Sysak, Geza Kurczveil, and John E. Bowers, "Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing," Opt. Express 19, 13692-13699 (2011)

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  1. H. Park, A. W. Fang, D. Liang, Y.-H. Kuo, H.-H. Chang, B. R. Koch, H.-W. Chen, M. N. Sysak, R. Jones, and J. E. Bowers, “Photonic integration on the hybrid silicon evanescent device platform,” Adv. Opt. Technol. 2008, 682978 (2008). [CrossRef]
  2. H. H. Chang, Y. H. Kuo, R. Jones, A. Barkai, and J. E. Bowers, “Integrated hybrid silicon triplexer,” Opt. Express 18(23), 23891–23899 (2010). [CrossRef] [PubMed]
  3. M. N. Sysak, J. O. Anthes, J. E. Bowers, O. Raday, and R. Jones, “Integration of hybrid silicon lasers and electroabsorption modulators,” Opt. Express 16(17), 12478–12486 (2008). [CrossRef] [PubMed]
  4. E. Skogen, J. Raring, G. Morrison, C. Wang, V. Lal, M. Masanovic, and L. Coldren, “Monolithically integrated active components: a quantum-well intermixing approach,” IEEE J. Sel. Top. Quantum Electron. 11(2), 343–355 (2005). [CrossRef]
  5. G. Lin and C. Lee, “Comparison of 1300 nm quantum well lasers using different material systems,” Opt. Quantum Electron. 34(12), 1191–1200 (2002). [CrossRef]
  6. D. Liang and J. Bowers, “Highly efficient vertical out gassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator (SOI) substrate,” J. Vac. Sci. Technol. B 26(4), 1560–1568 (2008). [CrossRef]
  7. J. W. Raring, “Advanced InP based monolithic integration using quantum well intermixing and MOCVD regrowth,” Ph. D dissertation, Department of Electrical and Computer Engineering, University of California, Santa Barbara. June 2006.
  8. Y. H. Kuo, H. W. Chen, and J. E. Bowers, “High speed hybrid silicon evanescent electroabsorption modulator,” Opt. Express 16(13), 9936–9941 (2008). [CrossRef] [PubMed]
  9. Y. Tang, H. Chen, S. Jain, J. Peters, U. Westergren, and J. Bowers, “50 Gb/s hybrid silicon travelling-wave electroabsorption modulator,” Opt. Express (to be published). [PubMed]

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