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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 15 — Jul. 18, 2011
  • pp: 13806–13811

Large lateral photovoltaic effect observed in nano Al-doped ZnO films

Jing Lu and Hui Wang  »View Author Affiliations

Optics Express, Vol. 19, Issue 15, pp. 13806-13811 (2011)

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Zinc oxide (ZnO), including a variety of metal-doped ZnO, as one kind of most important photoelectric materials, has been widely investigated and received enormous attention for a series of applications. In this work, we report a new finding which we call as lateral photovoltaic effect (LPE) in a nano Al-doped ZnO (ZAO) film based on ZAO/SiO2/Si homo-heterostructure. This large and stable LPE observed in ZAO is an important supplement to the existing ZnO properties. In addition, all data and analyses demonstrate ZAO film can also be a good candidate for new type position-sensitive detector (PSD) devices.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:

Original Manuscript: May 9, 2011
Revised Manuscript: June 6, 2011
Manuscript Accepted: June 7, 2011
Published: July 5, 2011

Jing Lu and Hui Wang, "Large lateral photovoltaic effect observed in nano Al-doped ZnO films," Opt. Express 19, 13806-13811 (2011)

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