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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 15 — Jul. 18, 2011
  • pp: 14662–14670

Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode

Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Jian-Kai Liou, Tsung-Yuan Tsai, and Wen-Chau Liu  »View Author Affiliations


Optics Express, Vol. 19, Issue 15, pp. 14662-14670 (2011)
http://dx.doi.org/10.1364/OE.19.014662


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Abstract

A GaN-based light-emitting diode (LED) with a direct-Ohmic contact structure, formed by an indium-tin-oxide (ITO) transparent film and Au thermal-diffused and removed layer, is studied. By depositing an Au metallic film on the Mg-doped GaN layer followed by thermal annealing and removed processes, an ITO direct-Ohmic contact at p-GaN/ITO interface is formed. An enhanced light output power of 18.0% is also found at this condition. This is mainly attributed to the larger and more uniform light-emission area resulted from the improved current spreading capability by the use of an ITO direct-Ohmic contact structure.

© 2011 OSA

OCIS Codes
(160.0160) Materials : Materials
(230.0230) Optical devices : Optical devices
(250.0250) Optoelectronics : Optoelectronics
(260.0260) Physical optics : Physical optics

ToC Category:
Optical Devices

History
Original Manuscript: February 22, 2011
Revised Manuscript: April 2, 2011
Manuscript Accepted: April 2, 2011
Published: July 15, 2011

Citation
Yi-Jung Liu, Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Jian-Kai Liou, Tsung-Yuan Tsai, and Wen-Chau Liu, "Implementation of an indium-tin-oxide (ITO) direct-Ohmic contact structure on a GaN-based light emitting diode," Opt. Express 19, 14662-14670 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-15-14662


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