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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 16 — Aug. 1, 2011
  • pp: 15149–15154

Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings

James Cheng, Sifang You, Samia Rahman, and Yu-Hwa Lo  »View Author Affiliations


Optics Express, Vol. 19, Issue 16, pp. 15149-15154 (2011)
http://dx.doi.org/10.1364/OE.19.015149


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Abstract

InGaAs single photon avalanche detectors have previously been fabricated with a negative-feedback mechanism, which allows for free-running Geiger-mode operation and improves the signal noise. To reduce the dark count and improve the detection efficiency, zinc diffusion is necessary to define the p-i-n junction and separate the high-field region from any mesa surface. Here, we demonstrate the benefits of a simple Zn-diffused geometry, yielding 1550nm single-photon detection efficiencies of 20% with a dark count rate of 8 kHz at 140 K for a 22μm diameter device.

© 2011 OSA

OCIS Codes
(040.3060) Detectors : Infrared
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)
(250.0040) Optoelectronics : Detectors

ToC Category:
Detectors

History
Original Manuscript: May 19, 2011
Manuscript Accepted: June 27, 2011
Published: July 21, 2011

Citation
James Cheng, Sifang You, Samia Rahman, and Yu-Hwa Lo, "Self-quenching InGaAs/InP single photon avalanche detector utilizing zinc diffusion rings," Opt. Express 19, 15149-15154 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-16-15149


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References

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