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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 17 — Aug. 15, 2011
  • pp: 15982–15989

Improving resolution of superlens lithography by phase-shifting mask

Na Yao, Zian Lai, Liang Fang, Changtao Wang, Qin Feng, Zheyu Zhao, and Xiangang Luo  »View Author Affiliations


Optics Express, Vol. 19, Issue 17, pp. 15982-15989 (2011)
http://dx.doi.org/10.1364/OE.19.015982


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Abstract

We propose to apply phase-shifting mask (PSM) to superlens lithography to improve its resolution. The PSM comprises of chromium slits alternatively filled by Ag and PMMA. The pi-phase shift is induced whereas their transmittance of electric intensity is almost equal for two neighboring slits. The destructive interference between two slits has greatly improved the spatial resolution and image fidelity. For representative configurations of superlens lithography, FDTD numerical simulations demonstrate that two slits with center-to-center distance d = 35 nm (~λ/10) can be resolved in PSM design, compared to 60 nm (~λ/6) without the PSM.

© 2011 OSA

OCIS Codes
(050.1940) Diffraction and gratings : Diffraction
(050.5080) Diffraction and gratings : Phase shift
(100.6640) Image processing : Superresolution
(240.6680) Optics at surfaces : Surface plasmons
(260.3910) Physical optics : Metal optics

ToC Category:
Physical Optics

History
Original Manuscript: March 18, 2011
Revised Manuscript: July 29, 2011
Manuscript Accepted: July 29, 2011
Published: August 5, 2011

Citation
Na Yao, Zian Lai, Liang Fang, Changtao Wang, Qin Feng, Zheyu Zhao, and Xiangang Luo, "Improving resolution of superlens lithography by phase-shifting mask," Opt. Express 19, 15982-15989 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-17-15982


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