OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 18 — Aug. 29, 2011
  • pp: 16927–16933

Detailed balance model for intermediate band solar cells with photon conservation

Chien-chung Lin, Wei-Ling Liu, and Ching-Yu Shih  »View Author Affiliations


Optics Express, Vol. 19, Issue 18, pp. 16927-16933 (2011)
http://dx.doi.org/10.1364/OE.19.016927


View Full Text Article

Enhanced HTML    Acrobat PDF (877 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We developed a comprehensive detailed balance model of intermediate band solar cell (IBSC). The key feature of our model is based on the conservation of photons in solar spectrum. Together with parametric analysis of carrier partition, we calculated the power conversion efficiency and found an enhancement of 1.5 times in wide band gap material IBSC (such as GaN). On the other hand, this model can also explain the inferior performance of GaAs-based IBSC through the degradation of open-circuit voltages, which can be attributed to the strong non-radiative recombination and the increased photo-generated carriers. The resulting maximum efficiency is complied with the classical Shockley-Queisser limit, and should be considered for the future IBSC design.

© 2011 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(350.6050) Other areas of optics : Solar energy
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Solar Energy

History
Original Manuscript: June 21, 2011
Revised Manuscript: July 28, 2011
Manuscript Accepted: August 8, 2011
Published: August 15, 2011

Citation
Chien-chung Lin, Wei-Ling Liu, and Ching-Yu Shih, "Detailed balance model for intermediate band solar cells with photon conservation," Opt. Express 19, 16927-16933 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-18-16927


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. W. Shockley and H. J. Queisser, “Detailed balance limit of efficiency of p-n junction solar cells,” J. Appl. Phys. 32(3), 510–519 (1961). [CrossRef]
  2. A. Luque and A. Marti, “Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels,” Phys. Rev. Lett. 78(26), 5014–5017 (1997). [CrossRef]
  3. T. Sugaya, S. Furue, H. Komaki, T. Amano, M. Mori, K. Komori, S. Niki, O. Numakami, and Y. Okano, “Highly stacked and well-aligned In0.4Ga0.6As quantum dot solar cells with In0.2Ga0.8As cap layer,” Appl. Phys. Lett. 97(18), 183104 (2010). [CrossRef]
  4. T. Sugaya, S. Furue, O. Numakami, T. Amano, M. Mori, K. Komori, Y. Okano, and S. Niki, “Characteristics of highly stacked quantum dot solar cells fabricated by intermittent deposition of InGaAs,” in 2010 35th IEEE Photovoltaic Specialist Conference (PVSC) (IEEE, 2010), pp.1863–1867.
  5. R. Oshima, A. Takata, Y. Shoji, K. Akahane, and Y. Okada, “InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell,” Physica E 42(10), 2757–2760 (2010). [CrossRef]
  6. G. D. Wei, K.-T. Shiu, N. C. Giebink, and S. R. Forrest, “Thermodynamic limits of quantum photo-voltaic cell efficiency,” Appl. Phys. Lett. 91(22), 223507 (2007). [CrossRef]
  7. W. G. Hu, T. Inoue, O. Kojima, and T. Kita, “Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells,” Appl. Phys. Lett. 97(19), 193106 (2010). [CrossRef]
  8. K. Yoshida, Y. Okada, and N. Sano, “Self-consistent simulation of intermediate band solar cells: Effect of occupation rates on device characteristics,” Appl. Phys. Lett. 97(13), 133503 (2010). [CrossRef]
  9. M. Ley, J. Boudaden, and Z. T. Kuznicki, “Thermodynamic efficiency of an intermediate band photovoltaic cell with low threshold Auger generation,” J. Appl. Phys. 98(4), 044905 (2005). [CrossRef]
  10. D. M. Chapin, C. S. Fuller, and G. L. Pearson, “A new silicon p-n junction photocell for converting solar radiation into electrical power,” J. Appl. Phys. 25(5), 676–677 (1954). [CrossRef]
  11. S. M. Hubbard, C. Plourde, Z. Bittner, C. G. Bailey, M. Harris, T. Bald, M. Bennett, D. V. Forbes, and R. Raffaelle, “InAs quantum dot enhancement of GaAs solar cells,” 2010 35th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, 2010), pp. 1217–1222.
  12. S. Hubbard and R. Raffaelle, Boosting solar-cell efficiency with quantum-dot-based nanotechnology,” SPIE Newsroom, Feb. 8, 2010, http://spie.org/x39022.xml?highlight=x2358&ArticleID=x39022 .

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited