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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 18 — Aug. 29, 2011
  • pp: 17260–17266

Enhanced lateral photovoltaic effect in the p-n heterojunction composed of manganite and silicon by side irradiation for position sensitive detecting

Juan Du, Hao Ni, Kun Zhao, Y.-C. Kong, H. K. Wong, Songqing Zhao, and Shaohua Chen  »View Author Affiliations

Optics Express, Vol. 19, Issue 18, pp. 17260-17266 (2011)

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Lateral photovoltaic effect has been studied in p-La0.67Ca0.33MnO3/n-Si heterojunction. Under illumination of continuous 808 nm laser beam on the film surface, a transient photovoltaic overshoot accompanied with the steady signal was observed when the laser turned off and on. The open-circuit photovoltage had a linear dependence on illuminated position, and the sensitivity reached 0.75 mVmW−1mm−1 for steady value and 6.25 mVmW−1mm−1 for the transient peak value. Especially, an enhancement in position detecting sensitivity was observed when the interface of this heterojunction was irradiated, which were 1.25 mVmW−1mm−1 (steady value) and 26.0 mVmW−1mm−1 (peak value). This work demonstrates a novel way to increase sensitivity for manganite-based position sensitive detectors.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Solar Energy

Original Manuscript: May 16, 2011
Revised Manuscript: July 9, 2011
Manuscript Accepted: July 20, 2011
Published: August 18, 2011

Juan Du, Hao Ni, Kun Zhao, Y.-C. Kong, H. K. Wong, Songqing Zhao, and Shaohua Chen, "Enhanced lateral photovoltaic effect in the p-n heterojunction composed of manganite and silicon by side irradiation for position sensitive detecting," Opt. Express 19, 17260-17266 (2011)

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