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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 20 — Sep. 26, 2011
  • pp: 18893–18902

Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample

Hsiang-Chen Wang, Xuan-Yu Yu, Yu-Lun Chueh, Tadas Malinauskas, Kestutis Jarasiunas, and Shih-Wei Feng  »View Author Affiliations

Optics Express, Vol. 19, Issue 20, pp. 18893-18902 (2011)

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Temperature-dependent picosecond non-degenerate four-wave-mixing experiments were performed to explore the carrier dynamics in an InGaN/GaN multiple quantum well sample, in which light emission enhancement with surface plasmon (SP) coupling has been identified. In the time-resolved photoluminescence results, we can identify the faster carrier decay time of the sample with surface plasmon coupling. The faster decay time is due to this sample’s ability to create additional channels for effective carrier recombination. In the four-wave-mixing results, a slower grating decay time of the sample with surface plasmon coupling was measured. The diffusion coefficients and surface recombination velocities of photo-created carriers were estimated by modeling the decay rate of transient grating signals. For the sample for which surface plasmon coupling exists, smaller diffusion coefficients and slower surface recombination velocities can be estimated when the temperatures are above 150 K. The carriers coupling with some SP modes is not the only mechanism contributing to emission enhancement. In the InGaN/GaN multiple quantum well sample, surface recombination suppressed by SP coupling is another factor for increased light emission efficiency.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(320.7150) Ultrafast optics : Ultrafast spectroscopy

ToC Category:

Original Manuscript: July 5, 2011
Revised Manuscript: August 26, 2011
Manuscript Accepted: August 29, 2011
Published: September 14, 2011

Hsiang-Chen Wang, Xuan-Yu Yu, Yu-Lun Chueh, Tadas Malinauskas, Kestutis Jarasiunas, and Shih-Wei Feng, "Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample," Opt. Express 19, 18893-18902 (2011)

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