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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 22 — Oct. 24, 2011
  • pp: 21818–21831

Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency

Weng W. Chow  »View Author Affiliations


Optics Express, Vol. 19, Issue 22, pp. 21818-21831 (2011)
http://dx.doi.org/10.1364/OE.19.021818


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Abstract

Bandstructure properties in wurtzite quantum wells can change appreciably with changing carrier density because of screening of quantum-confined Stark effect. An approach for incorporating these changes in an InGaN light-emitting-diode model is described. Bandstructure is computed for different carrier densities by solving Poisson and k·p equations in the envelop approximation. The information is used as input in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach is illustrated by modeling device internal quantum efficiency as a function of excitation.

© 2011 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: August 16, 2011
Revised Manuscript: September 22, 2011
Manuscript Accepted: September 22, 2011
Published: October 20, 2011

Citation
Weng W. Chow, "Modeling excitation-dependent bandstructure effects on InGaN light-emitting diode efficiency," Opt. Express 19, 21818-21831 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-22-21818


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