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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 23 — Nov. 7, 2011
  • pp: 22563–22574

Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited]

J. K. Wahlstrand, H. Zhang, S. B. Choi, J. E. Sipe, and S. T. Cundiff  »View Author Affiliations


Optics Express, Vol. 19, Issue 23, pp. 22563-22574 (2011)
http://dx.doi.org/10.1364/OE.19.022563


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Abstract

A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.

© 2011 OSA

OCIS Codes
(120.5050) Instrumentation, measurement, and metrology : Phase measurement
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(270.4180) Quantum optics : Multiphoton processes

ToC Category:
Nonlinear Absorption and Dispersion

History
Original Manuscript: September 6, 2011
Manuscript Accepted: September 15, 2011
Published: October 25, 2011

Virtual Issues
Nonlinear Optics (2011) Optical Materials Express

Citation
J. K. Wahlstrand, H. Zhang, S. B. Choi, J. E. Sipe, and S. T. Cundiff, "Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited]," Opt. Express 19, 22563-22574 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-23-22563


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