OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 23 — Nov. 7, 2011
  • pp: 23036–23041

Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates

Sung-Min Hwang, Hooyoung Song, Yong Gon Seo, Ji-Su Son, Jihoon Kim, and Kwang Hyeon Baik  »View Author Affiliations


Optics Express, Vol. 19, Issue 23, pp. 23036-23041 (2011)
http://dx.doi.org/10.1364/OE.19.023036


View Full Text Article

Enhanced HTML    Acrobat PDF (4200 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

We report on the new fabrication method of a-plane InGaN light emitting diodes (LEDs) using the epitaxy on patterned insulator on sapphire substrate (EPISS). Cathodoluminescence spectrum of the fully coalesced a-plane GaN template showed that band edge emission intensity of the wing region was four times higher than that of the window region. Threading dislocations and basal stacking faults densities in wing region were ~1×107 cm−2 and ~5☓104 cm−1, respectively. Blue-emitting (443.4 nm) a-plane InGaN LED employing EPISS showed the optical power of 3.1 mW and the EL FWHM of 25.2 nm at the injection current of 20 mA.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

History
Original Manuscript: August 2, 2011
Revised Manuscript: October 12, 2011
Manuscript Accepted: October 16, 2011
Published: October 28, 2011

Citation
Sung-Min Hwang, Hooyoung Song, Yong Gon Seo, Ji-Su Son, Jihoon Kim, and Kwang Hyeon Baik, "Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates," Opt. Express 19, 23036-23041 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-23-23036


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B56(16), R10024–R10027 (1997). [CrossRef]
  2. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature406(6798), 865–868 (2000). [CrossRef] [PubMed]
  3. S. Pimputkar, J. Speck, S. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3(4), 180–182 (2009). [CrossRef]
  4. U. T. Schwarz and M. Kneissl, “Nitride emitters go nonpolar,” Phys. Status Solidi (RRL)1(3), A44–A46 (2007). [CrossRef]
  5. C. Chen, V. Adivarahan, J. Yang, M. Shatalov, E. Kuokstis, and M. A. Khan, “Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells,” Jpn. J. Appl. Phys.42, L1039–L1040 (2003). [CrossRef]
  6. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, “Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire,” Appl. Phys. Lett.84(18), 3663–3665 (2004). [CrossRef]
  7. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, “Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.47(1), 119–123 (2008). [CrossRef]
  8. S. Hwang, Y. G. Seo, K. H. Baik, I. Cho, J. H. Baek, S. Jung, T. G. Kim, and M. Cho, “Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate,” Appl. Phys. Lett.95(7), 071101 (2009). [CrossRef]
  9. K. H. Baik, Y. G. Seo, S.-K. Hong, S. Lee, J. Kim, J.-S. Son, and S.-M. Hwang, “Effects of basal stacking faults on electrical anisotropy of nonpolar a-plane (11-20) GaN light-emitting diodes on sapphire substrate,” IEEE Photon. Technol. Lett.22(9), 595–597 (2010). [CrossRef]
  10. A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Appl. Phys. Lett.85(22), 5143–5145 (2004). [CrossRef]
  11. H. Yamada, K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates,” Phys. Status Solidi (RRL)2(2), 89–91 (2008). [CrossRef]
  12. Y. G. Seo, K. H. Baik, K.-M. Song, S. Lee, H. Yoon, J.-H. Park, K. Oh, and S.-M. Hwang, “Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates,” Curr. Appl. Phys.10(6), 1407–1410 (2010). [CrossRef]
  13. Q. Sun, B. H. Kong, C. D. Yerino, T.-S. Ko, B. Leung, H. K. Cho, and J. Han, “Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire,” J. Appl. Phys.106(12), 123519 (2009). [CrossRef]
  14. M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, “Threading dislocation reduction via laterally overgrown nonpolar (11-20) a-plane GaN,” Appl. Phys. Lett.81, 1201–1203 (2002). [CrossRef]
  15. C. F. Johnston, M. J. Kappers, M. A. Moram, J. L. Hollander, and C. J. Humphreys, “Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire,” J. Cryst. Growth311(12), 3295–3299 (2009). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4 Fig. 5
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited