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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 24 — Nov. 21, 2011
  • pp: 23664–23670

Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes

Qiugui Zhou, Dion C. McIntosh, Yaojia Chen, Wenlu Sun, Zhi Li, and Joe C. Campbell  »View Author Affiliations

Optics Express, Vol. 19, Issue 24, pp. 23664-23670 (2011)

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Natural lithography with 100-nm-diameter SiO2 spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO2 antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50 o incident angle) and low dark current at 10V.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.7190) Detectors : Ultraviolet
(230.5170) Optical devices : Photodiodes
(240.6700) Optics at surfaces : Surfaces
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:

Original Manuscript: August 16, 2011
Revised Manuscript: October 17, 2011
Manuscript Accepted: October 20, 2011
Published: November 7, 2011

Qiugui Zhou, Dion C. McIntosh, Yaojia Chen, Wenlu Sun, Zhi Li, and Joe C. Campbell, "Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes," Opt. Express 19, 23664-23670 (2011)

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