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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 25866–25872

Strained germanium thin film membrane on silicon substrate for optoelectronics

Donguk Nam, Devanand Sukhdeo, Arunanshu Roy, Krishna Balram, Szu-Lin Cheng, Kevin Chih-Yao Huang, Ze Yuan, Mark Brongersma, Yoshio Nishi, David Miller, and Krishna Saraswat  »View Author Affiliations


Optics Express, Vol. 19, Issue 27, pp. 25866-25872 (2011)
http://dx.doi.org/10.1364/OE.19.025866


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Abstract

This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n+ doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

© 2011 OSA

OCIS Codes
(160.4670) Materials : Optical materials
(250.0250) Optoelectronics : Optoelectronics
(310.6860) Thin films : Thin films, optical properties
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Optoelectronics

History
Original Manuscript: September 7, 2011
Revised Manuscript: October 12, 2011
Manuscript Accepted: October 16, 2011
Published: December 5, 2011

Citation
Donguk Nam, Devanand Sukhdeo, Arunanshu Roy, Krishna Balram, Szu-Lin Cheng, Kevin Chih-Yao Huang, Ze Yuan, Mark Brongersma, Yoshio Nishi, David Miller, and Krishna Saraswat, "Strained germanium thin film membrane on silicon substrate for optoelectronics," Opt. Express 19, 25866-25872 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-27-25866


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