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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 26006–26010

Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes

Jaehui Ahn, Hyunik Park, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Jr., and Jihyun Kim  »View Author Affiliations

Optics Express, Vol. 19, Issue 27, pp. 26006-26010 (2011)

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Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.

© 2011 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

ToC Category:
Optical Devices

Original Manuscript: October 12, 2011
Manuscript Accepted: November 14, 2011
Published: December 6, 2011

Jaehui Ahn, Hyunik Park, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, and Jihyun Kim, "Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodes," Opt. Express 19, 26006-26010 (2011)

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