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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 26394–26398

Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon

Junseok Heo, Zhenyu Jiang, Jian Xu, and Pallab Bhattacharya  »View Author Affiliations

Optics Express, Vol. 19, Issue 27, pp. 26394-26398 (2011)

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Coherent and directional emission at 1.55 μm from a PbSe colloidal quantum dot electroluminescent device on silicon is demonstrated. The quantum dots are sandwiched between a metallic mirror and a distributed Bragg reflector and are chemically treated in order to increase the electronic coupling. Electrons and holes are injected through ZnO nanocrystals and indium tin oxide, respectively. The measured electroluminescence exhibits a minimum linewidth of ~3.1 nm corresponding to a cavity quality factor of ~500 at a low injection current density of 3 A/cm2, and highly directional emission characteristics.

© 2011 OSA

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(230.6080) Optical devices : Sources

ToC Category:
Optical Devices

Original Manuscript: September 26, 2011
Revised Manuscript: November 28, 2011
Manuscript Accepted: November 30, 2011
Published: December 9, 2011

Junseok Heo, Zhenyu Jiang, Jian Xu, and Pallab Bhattacharya, "Coherent and directional emission at 1.55 μm from PbSe colloidal quantum dot electroluminescent device on silicon," Opt. Express 19, 26394-26398 (2011)

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