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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 27 — Dec. 19, 2011
  • pp: 26529–26535

Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition

Senlin Yang, Xuefeng Wang, Haitao Guo, Guoping Dong, Bo Peng, Jianrong Qiu, Rong Zhang, and Yi Shi  »View Author Affiliations

Optics Express, Vol. 19, Issue 27, pp. 26529-26535 (2011)

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Structural and near-infrared (NIR) emission properties were investigated in the Tm3+-Dy3+ codoped Ge-Ga-based amorphous chalcohalide films fabricated by pulsed laser deposition. The homogeneous films illustrated similar random network to the glass target according to the measurements of X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. An 808 nm laser diode pumping generated a superbroadband NIR emission ranging from 1050 to 1570 nm and the other intense broadband NIR emission centered at ~1800 nm, which was attributed to the efficient energy transfer from Tm3+ to Dy3+ ions. This was further verified by the broad-range excitation measurements near the Urbach optical-absorption edge involved defect states. The results shed light on the potential highly integrated planar optical device applications of the codoped amorphous chalcohalide films.

© 2011 OSA

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence

ToC Category:

Original Manuscript: September 6, 2011
Revised Manuscript: November 17, 2011
Manuscript Accepted: November 28, 2011
Published: December 13, 2011

Senlin Yang, Xuefeng Wang, Haitao Guo, Guoping Dong, Bo Peng, Jianrong Qiu, Rong Zhang, and Yi Shi, "Broadband near-infrared emission in Tm3+-Dy3+ codoped amorphous chalcohalide films fabricated by pulsed laser deposition," Opt. Express 19, 26529-26535 (2011)

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