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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 3 — Jan. 31, 2011
  • pp: 2242–2250

20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption

Shinji Matsuo, Akihiko Shinya, Chin-Hui Chen, Kengo Nozaki, Tomonari Sato, Yoshihiro Kawaguchi, Hideaki Taniyama, and Masaya Notomi  »View Author Affiliations

Optics Express, Vol. 19, Issue 3, pp. 2242-2250 (2011)

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We have demonstrated an ultracompact buried heterostructure photonic crystal (PhC) laser, consisting of an InGaAsP-based active region (5.0 x 0.3 x 0.15 μm3) buried in an InP layer. By employing a buried heterostructure with an InP layer, we can greatly improve thermal resistance and carrier confinement. We therefore achieved a low threshold input power of 6.8 μW and a maximum output power in the output waveguide of −10.3 dBm by optical pumping. The output light is effectively coupled to the output waveguide with a high external differential quantum efficiency of 53%. We observed a clear eye opening for a 20-Gbit/s NRZ signal modulation with an absorbed input power of 175.2 μW, resulting in an energy cost of 8.76 fJ/bit. This is the smallest reported energy cost for any type of semiconductor laser.

© 2011 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(230.5298) Optical devices : Photonic crystals
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:

Original Manuscript: December 6, 2010
Revised Manuscript: January 15, 2011
Manuscript Accepted: January 15, 2011
Published: January 21, 2011

Virtual Issues
Vol. 6, Iss. 2 Virtual Journal for Biomedical Optics

Shinji Matsuo, Akihiko Shinya, Chin-Hui Chen, Kengo Nozaki, Tomonari Sato, Yoshihiro Kawaguchi, Hideaki Taniyama, and Masaya Notomi, "20-Gbit/s directly modulated photonic crystal nanocavity laser with ultra-low power consumption," Opt. Express 19, 2242-2250 (2011)

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