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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 4 — Feb. 14, 2011
  • pp: 2941–2951

Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device

Francesco G. Della Corte, Sandro Rao, Giuseppe Coppola, and Caterina Summonte  »View Author Affiliations

Optics Express, Vol. 19, Issue 4, pp. 2941-2951 (2011)

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Hydrogenated amorphous silicon (a-Si:H) has been already considered for the objective of passive optical elements, like waveguides and ring resonators, within photonic integrated circuits at λ = 1.55 μm. However the study of its electro-optical properties is still at an early stage, therefore this semiconductor in practice is not considered for light modulation as yet. We demonstrated, for the first time, effective electro-optical modulation in a reverse biased a-Si:H p-i-n waveguiding structure. In particular, phase modulation was studied in a waveguide integrated Fabry-Perot resonator in which the Vπ⋅Lπ product was determined to be 63 V⋅cm. Characteristic switch-on and switch-off times of 14 ns were measured. The device employed a wider gap amorphous silicon carbide (a-SiC:H) film for the lower cladding layer instead of silicon oxide. In this way the highest temperature involved in the fabrication process was 170°C, which ensured the desired technological compatibility with CMOS processes.

© 2011 OSA

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(160.3130) Materials : Integrated optics materials
(230.2090) Optical devices : Electro-optical devices
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

Original Manuscript: November 29, 2010
Revised Manuscript: December 31, 2010
Manuscript Accepted: January 7, 2011
Published: February 1, 2011

Francesco G. Della Corte, Sandro Rao, Giuseppe Coppola, and Caterina Summonte, "Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon p-i-n waveguiding device," Opt. Express 19, 2941-2951 (2011)

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