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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 4 — Feb. 14, 2011
  • pp: 3347–3352

Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates

Yu Liu, Jun Xu, Hongcheng Sun, Shenghua Sun, Wei Xu, Ling Xu, and Kunji Chen  »View Author Affiliations

Optics Express, Vol. 19, Issue 4, pp. 3347-3352 (2011)

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Nano-sphere lithography technique was used to fabricate nano-patterned Si substrates with various depths by controlling the etching time. The depth-dependent broadband anti-reflection was observed and the reflectivity could be reduced to 5%. By depositing Si quantum dots/SiO2 multilayer on nano-patterned substrate, the reflection was further suppressed and luminescence intensity was significantly enhanced. The luminescence enhancement is dependent of the etching depth and the luminescence can be one order of magnitude stronger than that on flat substrate due to both the improved absorption of excitation light and the increase of light extraction ratio by nano-patterned structures.

© 2011 OSA

OCIS Codes
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: December 2, 2010
Revised Manuscript: January 21, 2011
Manuscript Accepted: January 30, 2011
Published: February 4, 2011

Yu Liu, Jun Xu, Hongcheng Sun, Shenghua Sun, Wei Xu, Ling Xu, and Kunji Chen, "Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates," Opt. Express 19, 3347-3352 (2011)

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