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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 4 — Feb. 14, 2011
  • pp: 3637–3646

Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency

Ji Hye Kang, Jae Hyoung Ryu, Hyun Kyu Kim, Hee Yun Kim, Nam Han, Young Jae Park, Periyayya Uthirakumar, and Chang-Hee Hong  »View Author Affiliations

Optics Express, Vol. 19, Issue 4, pp. 3637-3646 (2011)

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The various surface texturing effects of InGaN light emitting diodes (LEDs) have been investigated by comparison of experimented data and simulated data. The single-layer and double-layer texturing were performed with the help of ITO nanospheres using wet etching, where the ITO ohmic contact layer and the p-GaN layer are textured using ITO nanospheres as an etch mask. In case of single-layer texturing, p-type GaN layer texturing was more effective than ITO ohmic contact layer texturing. The maximum enhancement of wall-plug efficiency of double-layered textured LEDs is 40% more than conventional LEDs, after packaging at an injected current of 20 mA. The increase of light scattering at the textured GaN surfaces is a major reason for increasing the light extraction efficiency of LEDs.

© 2011 OSA

OCIS Codes
(190.5890) Nonlinear optics : Scattering, stimulated
(250.0250) Optoelectronics : Optoelectronics
(290.4210) Scattering : Multiple scattering

ToC Category:
Optical Devices

Original Manuscript: October 25, 2010
Revised Manuscript: January 21, 2011
Manuscript Accepted: January 30, 2011
Published: February 10, 2011

Virtual Issues
Vol. 6, Iss. 3 Virtual Journal for Biomedical Optics

Ji Hye Kang, Jae Hyoung Ryu, Hyun Kyu Kim, Hee Yun Kim, Nam Han, Young Jae Park, Periyayya Uthirakumar, and Chang-Hee Hong, "Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency," Opt. Express 19, 3637-3646 (2011)

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