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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 5 — Feb. 28, 2011
  • pp: 4182–4187

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot

V. B. Verma, Martin J. Stevens, K. L. Silverman, N. L. Dias, A. Garg, J. J. Coleman, and R. P. Mirin  »View Author Affiliations

Optics Express, Vol. 19, Issue 5, pp. 4182-4187 (2011)

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We demonstrate photon antibunching from a single lithographically defined quantum dot fabricated by electron beam lithography, wet chemical etching, and overgrowth of the barrier layers by metalorganic chemical vapor deposition. Measurement of the second-order autocorrelation function indicates g(2)(0) = 0.395 ± 0.030, below the 0.5 limit necessary for classification as a single photon source.

© 2011 OSA

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(270.0270) Quantum optics : Quantum optics
(270.5290) Quantum optics : Photon statistics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Quantum Optics

Original Manuscript: October 29, 2010
Revised Manuscript: December 29, 2010
Manuscript Accepted: January 16, 2011
Published: February 17, 2011

V. B. Verma, Martin J. Stevens, K. L. Silverman, N. L. Dias, A. Garg, J. J. Coleman, and R. P. Mirin, "Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot," Opt. Express 19, 4182-4187 (2011)

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