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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 6 — Mar. 14, 2011
  • pp: 5040–5046

Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector

Andy Eu-Jin Lim, Tsung-Yang Liow, Fang Qing, Ning Duan, Liang Ding, Mingbin Yu, Guo-Qiang Lo, and Dim-Lee Kwong  »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5040-5046 (2011)

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We report a novel evanescent-coupled germanium (Ge) electro-absorption (EA) modulator with a small active area of 16 μm2 giving an extinction ratio of at least 10 dB for a wavelength range of 1580 – 1610 nm. The modulation efficiency of the modulator at this wavelength range was ~2 dB/V. In addition, monolithic integration of both evanescent-coupled Ge EA modulator and Ge p-i-n photodetector is demonstrated for the first time.

© 2011 OSA

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.2090) Optical devices : Electro-optical devices
(230.4110) Optical devices : Modulators
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Optical Devices

Original Manuscript: December 6, 2010
Revised Manuscript: February 1, 2011
Manuscript Accepted: February 3, 2011
Published: March 2, 2011

Andy Eu-Jin Lim, Tsung-Yang Liow, Fang Qing, Ning Duan, Liang Ding, Mingbin Yu, Guo-Qiang Lo, and Dim-Lee Kwong, "Novel evanescent-coupled germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector," Opt. Express 19, 5040-5046 (2011)

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