Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures

doi:10.1364/OE.19.005442

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures

Emre Sari, Sedat Nizamoglu, Jung-Hun Choi, Seung-Jae Lee, Kwang-Hyeon Baik, In-Hwan Lee, Jong-Hyeob Baek, Sung-Min Hwang, and Hilmi Volkan Demir »View Author Affiliations

Optics Express, Vol. 19, Issue 6, pp. 5442-5450 (2011)
http://dx.doi.org/10.1364/OE.19.005442

View Full Text Article

Enhanced HTML Acrobat PDF (1138 KB)

Journal Search
Article Lookup

Article Tools

Citations

Alert me when this article is cited
Export Citation/Save

Abstract
Article Info
References (21)
Cited By
Figures (7)
Metrics
Related Content

Abstract

We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi’s golden rule.

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(230.0250) Optical devices : Optoelectronics

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: December 22, 2010
Revised Manuscript: February 23, 2011
Manuscript Accepted: February 25, 2011
Published: March 8, 2011

Citation
Emre Sari, Sedat Nizamoglu, Jung-Hun Choi, Seung-Jae Lee, Kwang-Hyeon Baik, In-Hwan Lee, Jong-Hyeob Baek, Sung-Min Hwang, and Hilmi Volkan Demir, "Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures," Opt. Express 19, 5442-5450 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-6-5442

Sort: Author | Year | Journal | Reset

References

S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High power InGaN single-quantum-well-structure blue and violet light-emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995). [CrossRef]
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes,” Appl. Phys. Lett. 69(26), 4056–4058 (1996). [CrossRef]
S. Nizamoglu, G. Zengin, and H. V. Demir, “Color-converting combinations of nanocrystal emitters for warm-white light generation with high color rendering index,” Appl. Phys. Lett. 92(3), 031102–031104 (2008). [CrossRef]
H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, “III-nitride blue microdisplays,” Appl. Phys. Lett. 78(9), 1303–1305 (2001). [CrossRef]
E. Sari, S. Nizamoglu, T. Ozel, and H. V. Demir, “Blue quantum electroabsorption modulators based on reversed quantum confined Stark effect with blueshift,” Appl. Phys. Lett. 90(1), 011101 (2007). [CrossRef]
D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, “High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN,” Appl. Phys. Lett. 74(5), 762 (1999). [CrossRef]
J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.-J. Choi, and P. Yang, “Single-crystal gallium nitride nanotubes,” Nature 422(6932), 599–602 (2003). [CrossRef] [PubMed]
B. Monemar and G. Pozina, ““Group III-nitride based hetero and quantum structures,” Prog. Quantum Electron. 24(6), 239–290 (2000). [CrossRef]
C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Liu, E. A. Preble, and D. Hanser, “Light-emitting diode development on polar and non-polar GaN substrates,” J. Cryst. Growth 310(17), 3987–3991 (2008). [CrossRef]
T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, “Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics,” Phys. Status Solidi 4(7), 1610–1642 (2007).
K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45(45), L1197–L1199 (2006). [CrossRef]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007). [CrossRef]
S.-M. Hwang, Y.-G. Seo, K.-H. Baik, I.-S. Cho, J.-H. Baek, S.-K. Jung, T. G. Kim, and M.-W. Cho, “Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate,” Appl. Phys. Lett. 95(7), 071101 (2009). [CrossRef]
G. A. Garrett, H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates,” Phys. Status Solidi C 6(S2), S800–S803 (2009). [CrossRef]
M. Häberlen, T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” J. Appl. Phys. 108(3), 033523–033529 (2010). [CrossRef]
E. Lioudakis, A. Othonos, E. Dimakis, E. Iliopoulos, and A. Georgakilas, “Ultrafast carrier dynamics in InxGa1−xN (0001) epilayers: Effects of high fluence excitation,” Appl. Phys. Lett. 88(12), 121128 (2006). [CrossRef]
E. Sari, S. Nizamoglu, I.-H. Lee, J.-H. Baek, and H. V. Demir, “Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields,” Appl. Phys. Lett. 94(21), 211107 (2009). [CrossRef]
Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim, “Field-dependent carrier decay dynamics in strained InxGa1-xN/GaN quantum wells,” Phys. Rev. B 66(3), 035334 (2002). [CrossRef]
Y. D. Jho, Y. S. Yahng, E. Oh, and D. S. Kim, “Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells,” Appl. Phys. Lett. 79(8), 1130 (2001). [CrossRef]
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007). [CrossRef]
D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985). [CrossRef] [PubMed]

Badcock, T. J.
Baek, J.-H.
Baik, K.-H.
Burrus, C. A.
Chemla, D. S.
Cho, I.-S.
Cho, M.-W.
Choi, H.-J.
Cohen, D. A.
Damen, T. C.
Dawson, P.
Demir, H. V.
DenBaars, S. P.
Detchprohm, T.
Diaz, J.
Dimakis, E.
Farrell, R. M.
Feezell, D. F.
Fujito, K.
Gardner, N. F.
Garrett, G. A.
Georgakilas, A.
Goldberger, J.
Gossard, A. C.
Häberlen, M.
Hamilton, M.
Hanser, A.
Hanser, D.
He, R.
Hollander, J. L.
Hommel, D.
Humphreys, C. J.
Hwang, S.-M.
Ichihara, J.
Iliopoulos, E.
Iwasa, N.
Jho, Y. D.
Jiang, H. X.
Jin, S. X.
Jung, S.-K.
Kappers, M. J.
Kim, D. S.
Kim, K.-C.
Kim, T. G.
Kiyoku, H.
Krames, M. R.
Kroeger, R.
Kung, P.
Lee, I.-H.
Lee, S.
Li, J.
Lin, J. Y.
Lioudakis, E.
Liu, L.
Matsushita, T.
Miller, D. A. B.
Monemar, B.
Monroy, E.
Moram, M. A.
Mueller, G. O.
Munkholm, A.
Nagahama, S.
Nakagawa, D.
Nakamura, S.
Nizamoglu, S.
Oh, E.
Ohta, H.
Okamoto, K.
Oliver, R. A.
Othonos, A.
Ozel, T.
Paskov, P. P.
Paskova, T.
Persans, P. D.
Pozina, G.
Preble, E.
Preble, E. A.
Razeghi, M.
Saito, M.
Sanchez, F. J.
Sari, E.
Schmidt, M. C.
Senawiratne, J.
Senoh, M.
Seo, Y.-G.
Shakya, J.
Shen, H.
Shen, Y. C.
Sonobe, M.
Speck, J. S.
Sugimoto, Y.
Takasu, H.
Tutor, M.
Tyagi, A.
Walker, D.
Watanabe, S.
Wetzel, C.
Wiegmann, W.
Williams, N. M.
Wood, T. H.
Wraback, M.
Wu, J.
Yahng, J. S.
Yahng, Y. S.
Yamada, T.
Yan, H.
Yang, P.
Zengin, G.
Zhang, Y.
Zhu, M.

Appl. Phys. Lett.

S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, “High power InGaN single-quantum-well-structure blue and violet light-emitting diodes,” Appl. Phys. Lett. 67(13), 1868–1870 (1995). [CrossRef]
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes,” Appl. Phys. Lett. 69(26), 4056–4058 (1996). [CrossRef]
S. Nizamoglu, G. Zengin, and H. V. Demir, “Color-converting combinations of nanocrystal emitters for warm-white light generation with high color rendering index,” Appl. Phys. Lett. 92(3), 031102–031104 (2008). [CrossRef]
H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, “III-nitride blue microdisplays,” Appl. Phys. Lett. 78(9), 1303–1305 (2001). [CrossRef]
E. Sari, S. Nizamoglu, T. Ozel, and H. V. Demir, “Blue quantum electroabsorption modulators based on reversed quantum confined Stark effect with blueshift,” Appl. Phys. Lett. 90(1), 011101 (2007). [CrossRef]
D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F. J. Sanchez, J. Diaz, and M. Razeghi, “High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN,” Appl. Phys. Lett. 74(5), 762 (1999). [CrossRef]
S.-M. Hwang, Y.-G. Seo, K.-H. Baik, I.-S. Cho, J.-H. Baek, S.-K. Jung, T. G. Kim, and M.-W. Cho, “Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate,” Appl. Phys. Lett. 95(7), 071101 (2009). [CrossRef]
E. Lioudakis, A. Othonos, E. Dimakis, E. Iliopoulos, and A. Georgakilas, “Ultrafast carrier dynamics in InxGa1−xN (0001) epilayers: Effects of high fluence excitation,” Appl. Phys. Lett. 88(12), 121128 (2006). [CrossRef]
E. Sari, S. Nizamoglu, I.-H. Lee, J.-H. Baek, and H. V. Demir, “Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields,” Appl. Phys. Lett. 94(21), 211107 (2009). [CrossRef]
Y. D. Jho, Y. S. Yahng, E. Oh, and D. S. Kim, “Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells,” Appl. Phys. Lett. 79(8), 1130 (2001). [CrossRef]
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007). [CrossRef]

J. Appl. Phys.

M. Häberlen, T. J. Badcock, M. A. Moram, J. L. Hollander, M. J. Kappers, P. Dawson, C. J. Humphreys, and R. A. Oliver, “Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth,” J. Appl. Phys. 108(3), 033523–033529 (2010). [CrossRef]

J. Cryst. Growth

C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Liu, E. A. Preble, and D. Hanser, “Light-emitting diode development on polar and non-polar GaN substrates,” J. Cryst. Growth 310(17), 3987–3991 (2008). [CrossRef]

Jpn. J. Appl. Phys.

K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu, “Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals,” Jpn. J. Appl. Phys. 45(45), L1197–L1199 (2006). [CrossRef]
M. C. Schmidt, K.-C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007). [CrossRef]

Nature

J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.-J. Choi, and P. Yang, “Single-crystal gallium nitride nanotubes,” Nature 422(6932), 599–602 (2003). [CrossRef] [PubMed]

Phys. Rev. B

Y. D. Jho, J. S. Yahng, E. Oh, and D. S. Kim, “Field-dependent carrier decay dynamics in strained InxGa1-xN/GaN quantum wells,” Phys. Rev. B 66(3), 035334 (2002). [CrossRef]

Phys. Rev. B Condens. Matter

D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, “Electric field dependence of optical absorption near the band gap of quantum-well structures,” Phys. Rev. B Condens. Matter 32(2), 1043–1060 (1985). [CrossRef] [PubMed]

Phys. Status Solidi

T. Paskova, R. Kroeger, D. Hommel, P. P. Paskov, B. Monemar, E. Preble, A. Hanser, N. M. Williams, and M. Tutor, “Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics,” Phys. Status Solidi 4(7), 1610–1642 (2007).

Phys. Status Solidi C

G. A. Garrett, H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates,” Phys. Status Solidi C 6(S2), S800–S803 (2009). [CrossRef]

Prog. Quantum Electron.

B. Monemar and G. Pozina, ““Group III-nitride based hetero and quantum structures,” Prog. Quantum Electron. 24(6), 239–290 (2000). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Click here to see a list of articles that cite this paper