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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 5827–5832

High extinction ratio 10 Gbit/s silicon optical modulator

Gilles Rasigade, Melissa Ziebell, Delphine Marris-Morini, Jean-Marc Fédéli, Frédéric Milesi, Philippe Grosse, David Bouville, Eric Cassan, and Laurent Vivien  »View Author Affiliations


Optics Express, Vol. 19, Issue 7, pp. 5827-5832 (2011)
http://dx.doi.org/10.1364/OE.19.005827


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Abstract

High speed and high extinction ratio silicon optical modulator using carrier depletion is experimentally demonstrated. The phase-shifter is a 1.8 mm-long PIPIN diode which is integrated in a Mach Zehnder interferometer. 8.1 dB Extinction Ratio at 10 Gbit/s is obtained simultaneously with optical loss as low as 6 dB.

© 2011 OSA

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: January 19, 2011
Revised Manuscript: February 22, 2011
Manuscript Accepted: March 2, 2011
Published: March 14, 2011

Citation
Gilles Rasigade, Melissa Ziebell, Delphine Marris-Morini, Jean-Marc Fédéli, Frédéric Milesi, Philippe Grosse, David Bouville, Eric Cassan, and Laurent Vivien, "High extinction ratio 10 Gbit/s silicon optical modulator," Opt. Express 19, 5827-5832 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-5827


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References

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