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Optics Express

Optics Express

  • Editor: C. Martijin de Sterke
  • Vol. 19, Iss. 7 — Mar. 28, 2011
  • pp: 6400–6405

GeSn p-i-n photodetector for all telecommunication bands detection

Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, and Qiming Wang  »View Author Affiliations


Optics Express, Vol. 19, Issue 7, pp. 6400-6405 (2011)
http://dx.doi.org/10.1364/OE.19.006400


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Abstract

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

© 2011 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.4510) Fiber optics and optical communications : Optical communications
(200.4650) Optics in computing : Optical interconnects

ToC Category:
Detectors

History
Original Manuscript: January 19, 2011
Revised Manuscript: March 3, 2011
Manuscript Accepted: March 4, 2011
Published: March 21, 2011

Citation
Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, and Qiming Wang, "GeSn p-i-n photodetector for all telecommunication bands detection," Opt. Express 19, 6400-6405 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-6400


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