GeSn p-i-n photodetector for all telecommunication bands detection

doi:10.1364/OE.19.006400

GeSn p-i-n photodetector for all telecommunication bands detection

Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, and Qiming Wang »View Author Affiliations

Optics Express, Vol. 19, Issue 7, pp. 6400-6405 (2011)
http://dx.doi.org/10.1364/OE.19.006400

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Abstract

Using a 820 nm-thick high-quality Ge_0.97Sn_0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.4510) Fiber optics and optical communications : Optical communications
(200.4650) Optics in computing : Optical interconnects

ToC Category:
Detectors

History
Original Manuscript: January 19, 2011
Revised Manuscript: March 3, 2011
Manuscript Accepted: March 4, 2011
Published: March 21, 2011

Citation
Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, and Qiming Wang, "GeSn p-i-n photodetector for all telecommunication bands detection," Opt. Express 19, 6400-6405 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-7-6400

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References

L. Colace, G. Masini, G. Assanto, H. C. Luan, K. Wada, and L. C. Kimerling, “Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates,” Appl. Phys. Lett. 76(10), 1231–1233 (2000). [CrossRef]
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J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010). [CrossRef]
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G. He and H. A. Atwater, “Synthesis of epitaxial SnxGe1-x alloy films by ion-assisted molecular beam epitaxy,” Appl. Phys. Lett. 68(5), 664–666 (1996). [CrossRef]
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L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]
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Ahn, D.
Assanto, G.
Atwater, H. A.
Bauer, M.
Beals, M.
Birdwell, A. G.
Cannon, D. D.
Canonico, M.
Carlsson, J. R. A.
Chen, J.
Cheng, B. W.
Chizmeshya, A. V. G.
Colace, L.
Cook, C. S.
D’Costa, V. R.
Danielson, D. T.
Desjardins, P.
Fang, Y.
Ferrara, P.
Fulgoni, D.
Giziewicz, W.
Greene, J. E.
Gurdal, O.
He, G.
Hong, C. Y.
Hu, C.
Hu, W. X.
Ilday, F. O.
Jongthammanurak, S.
Kärtner, F. X.
Kimerling, L. C.
Kouvetakis, J.
Littler, C. L.
Liu, J.
Luan, H. C.
Masini, G.
Mathews, J.
Menendez, J.
Michel, J.
Nash, L.
Pan, D.
Radamson, H. H.
Roucka, R.
Smith, D. J.
Su, S. J.
Sundgren, J.-E.
Taraci, J.
Taylor, N.
Tolle, J.
Wada, K.
Wang, Q. M.
Wang, W.
Xie, J.
Xue, C. L.
Xue, H. Y.
Yasaitis, J.
Yu, S. Q.
Yu, Y. D.
Zhang, G. Z.
Zollner, S.
Zuo, Y. H.

Annu. Rev. Mater. Res.

J. Kouvetakis, J. Menendez, and A. V. G. Chizmeshya, “Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon,” Annu. Rev. Mater. Res. 36(1), 497–554 (2006). [CrossRef]

Appl. Phys. Lett.

L. Colace, G. Masini, G. Assanto, H. C. Luan, K. Wada, and L. C. Kimerling, “Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates,” Appl. Phys. Lett. 76(10), 1231–1233 (2000). [CrossRef]
J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. O. Ilday, F. X. Kärtner, and J. Yasaitis, “High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform,” Appl. Phys. Lett. 87(10), 103501 (2005). [CrossRef]
G. He and H. A. Atwater, “Synthesis of epitaxial SnxGe1-x alloy films by ion-assisted molecular beam epitaxy,” Appl. Phys. Lett. 68(5), 664–666 (1996). [CrossRef]
M. Bauer, J. Taraci, J. Tolle, A. V. G. Chizmeshya, S. Zollner, D. J. Smith, J. Menendez, C. Hu, and J. Kouvetakis, “Ge-Sn semiconductors for band-gap and lattice engineering,” Appl. Phys. Lett. 81(16), 2992–2994 (2002). [CrossRef]
J. Mathews, R. Roucka, J. Xie, S. Q. Yu, J. Menendez, and J. Kouvetakis, “Extended performance GeSn/Si(100) p-i-n photodetecors for full spectral range telecommunication applications,” Appl. Phys. Lett. 95(13), 133506 (2009). [CrossRef]

Chin. Phys. B

H. Y. Xue, C. L. Xue, B. W. Cheng, Y. D. Yu, and Q. M. Wang, “Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm,” Chin. Phys. B 18(6), 2542–2544 (2009). [CrossRef]

IEEE Photon. Technol. Lett.

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low Dark-Current Germanium-on-Silicon Near-Infrared Detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]

J. Appl. Phys.

O. Gurdal, P. Desjardins, J. R. A. Carlsson, N. Taylor, H. H. Radamson, J.-E. Sundgren, and J. E. Greene, “Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1-xSnx (x≤0.26) alloys on Ge(001)2×1,” J. Appl. Phys. 83(1), 162–170 (1998). [CrossRef]

J. Cryst. Growth

S. J. Su, W. Wang, B. W. Cheng, G. Z. Zhang, W. X. Hu, C. L. Xue, Y. H. Zuo, and Q. M. Wang, “Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates,” J. Cryst. Growth 317(1), 43–46 (2011). [CrossRef]

Nat. Photonics

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010). [CrossRef]

Opt. Express

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007). [CrossRef] [PubMed]

Phys. Rev. B

V. R. D’Costa, C. S. Cook, A. G. Birdwell, C. L. Littler, M. Canonico, S. Zollner, J. Kouvetakis, and J. Menendez, “Optical critical points of thin-film Ge1-ySny alloys: A comparative Ge1-ySny/Ge1-xSix study,” Phys. Rev. B 73(12), 125207 (2006). [CrossRef]

Semicond. Sci. Technol.

V. R. D’Costa, Y. Fang, J. Mathews, R. Roucka, J. Tolle, J. Menendez, and J. Kouvetakis, “Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands,” Semicond. Sci. Technol. 24(11), 115006 (2009). [CrossRef]

2011, Su, J. Cryst. Growth
2010, Michel, Nat. Photonics
2009, D’Costa, Semicond. Sci. Technol.
2009, Mathews, Appl. Phys. Lett.
2009, Xue, Chin. Phys. B
2007, Colace, IEEE Photon. Technol. Lett.
2007, Ahn, Opt. Express
2006, D’Costa, Phys. Rev. B
2006, Kouvetakis, Annu. Rev. Mater. Res.
2005, Liu, Appl. Phys. Lett.
2002, Bauer, Appl. Phys. Lett.
2000, Colace, Appl. Phys. Lett.
1998, Gurdal, J. Appl. Phys.
1996, He, Appl. Phys. Lett.

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