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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 19, Iss. 9 — Apr. 25, 2011
  • pp: 8715–8720

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator

Ning-Ning Feng, Shirong Liao, Dazeng Feng, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Yong Liu, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari  »View Author Affiliations


Optics Express, Vol. 19, Issue 9, pp. 8715-8720 (2011)
http://dx.doi.org/10.1364/OE.19.008715


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Abstract

We present the design and fabrication of a waveguide-based Ge electro-absorption (EA) modulator integrated with a 3µm silicon-on-isolator (SOI) waveguide. The proposed Ge EA modulator employs a butt-coupled horizontally-oriented p-i-n structure. The optical design achieves a low-loss transition from Ge to Si waveguides. The interaction between the optical mode of the waveguide and the bias induced electric field in the p-i-n structure was maximized to achieve high modulation efficiency. By balancing the trade-offs between the extinction ratio and the insertion loss of the device, an optimal working regime was identified. The measurement results from a fabricated device were used to verify the design. Under a −4Vpp reverse bias, the device demonstrates a total insertion loss (including the transition loss) of 2.7-5.2dB and an extinction ratio of 4.9-8.2dB over the wavelength range of 1610-1640nm. Subtracting the contribution of the transition loss, the Δα/α value for the fabricated device was estimated to be between 2.2 and 3.2 with an electric field around 55kV/cm.

© 2011 OSA

OCIS Codes
(060.4080) Fiber optics and optical communications : Modulation
(130.3120) Integrated optics : Integrated optics devices
(200.4650) Optics in computing : Optical interconnects
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Integrated Optics

History
Original Manuscript: March 7, 2011
Revised Manuscript: April 7, 2011
Manuscript Accepted: April 8, 2011
Published: April 19, 2011

Citation
Ning-Ning Feng, Shirong Liao, Dazeng Feng, Xin Wang, Po Dong, Hong Liang, Cheng-Chih Kung, Wei Qian, Yong Liu, Joan Fong, Roshanak Shafiiha, Ying Luo, Jack Cunningham, Ashok V. Krishnamoorthy, and Mehdi Asghari, "Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator," Opt. Express 19, 8715-8720 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-9-8715


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