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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S4 — Jul. 4, 2011
  • pp: A949–A955

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates

Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang  »View Author Affiliations


Optics Express, Vol. 19, Issue S4, pp. A949-A955 (2011)
http://dx.doi.org/10.1364/OE.19.00A949


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Abstract

GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.

© 2011 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: April 7, 2011
Revised Manuscript: June 16, 2011
Manuscript Accepted: June 17, 2011
Published: July 1, 2011

Virtual Issues
Optics in LEDS for Lighting (2011) Optics Express

Citation
Xiao-Hui Huang, Jian-Ping Liu, Jun-Jie Kong, Hui Yang, and Huai-Bing Wang, "High-efficiency InGaN-based LEDs grown on patterned sapphire substrates," Opt. Express 19, A949-A955 (2011)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-19-S4-A949


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