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Energy Express

  • Editor: Bernard Kippelen
  • Vol. 19, Iss. S5 — Sep. 12, 2011
  • pp: A1141–A1147

Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers

Hsin-Chu Chen, Chien-Chung Lin, Hao-Wei Han, Yu-Lin Tsai, Chia-Hua Chang, Hsun-Wen Wang, Min-An Tsai, Hao-Chung Kuo, and Peichen Yu  »View Author Affiliations

Optics Express, Vol. 19, Issue S5, pp. A1141-A1147 (2011)

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The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property.

© 2011 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: June 7, 2011
Revised Manuscript: July 14, 2011
Manuscript Accepted: July 20, 2011
Published: August 19, 2011

Hsin-Chu Chen, Chien-Chung Lin, Hao-Wei Han, Yu-Lin Tsai, Chia-Hua Chang, Hsun-Wen Wang, Min-An Tsai, Hao-Chung Kuo, and Peichen Yu, "Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers," Opt. Express 19, A1141-A1147 (2011)

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