First-generation diode lasers produced stimulated emission from thick active regions consisting of a single semiconductor material. However, not long after epitaxial growth techniques advanced to the point of allowing thin heterostructure layers to be deposited with a high degree of control and precision, the quantum well laser was born. It soon became apparent that besides providing a valuable vehicle for studying fundamental quantum physics and optics in a solid state environment, quantum well diode lasers were also capable of dramatic performance improvements over their bulk counterparts. The lowering of threshold current densities was especially impressive.
© Optical Society of America
Focus Issue: Quantum well laser design
Original Manuscript: February 16, 1998
Published: February 16, 1998
I. Vurgaftman and J. Meyer, "Introduction," Opt. Express 2, 118-118 (1998)
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