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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 2, Iss. 4 — Feb. 16, 1998
  • pp: 119–124

Calculation of quantum well laser gain spectra

W.W. Chow, A. Girndt, and S.W. Koch  »View Author Affiliations


Optics Express, Vol. 2, Issue 4, pp. 119-124 (1998)
http://dx.doi.org/10.1364/OE.2.000119


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Abstract

This paper describes a method for calculating gain spectra of quantum well laser structures. The approach is based on the Semiconductor Bloch equations, with Coulomb correlation effects treated at the level of quantum kinetic theory in the Markovian limit. Results obtained from applying this method to an InGaN quantum well laser are presented.

© Optical Society of America

OCIS Codes
(140.3430) Lasers and laser optics : Laser theory
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials

ToC Category:
Focus Issue: Quantum well laser design

History
Original Manuscript: October 8, 1997
Published: February 16, 1998

Citation
Weng Chow, A. Girndt, and Stephen Koch, "Calculation of quantum well laser gain spectra," Opt. Express 2, 119-124 (1998)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-2-4-119


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References

  1. B. Zee, "Broadening mechanism in semiconductor (GaAs) lasers: limitations to single mode power emission," IEEE J. Quantum Electron. QE-14, 727 (1978). [CrossRef]
  2. M. Yamada and Y. Suematsu, "Analysis of gain suppression in undoped injection lasers," J. Appl. Phys. 52, 2653 (1981). [CrossRef]
  3. W.W. Chow, P. M. Smowton, P. Blood, A. Girndt, F. Jahnke and S.W.Koch, "Comparison of experimental and theoretical GaInP quantum well gain spectra," Appl. Phys. Lett. 71, 157 (1997). [CrossRef]
  4. M. Lindberg and S. W. Koch, "Effective Bloch equations for semiconductors," Phys. Rev. B38, 3342 (1988).
  5. H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors, 3rd ed. (World Scientific, Singapore, 1994).
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  10. W. W. Chow, A. Knorr, S. Hughes, A. Girndt and S. W. Koch, "Carrier correlation effects in a quantum-well semiconductor laser medium," IEEE J. Sel. Top. Quantum Electron. 3, 136 (1997). [CrossRef]
  11. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki, "P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)," Jpn. J. Appl. Phys. 28, L2112 (1989). [CrossRef]
  12. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimota and H, Kiyoku, "Room-termperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Letts. 69, 4056 (1996). [CrossRef]
  13. S. L. Chuang and C. S. Chang, " ~ k ~ p method for strained wurzite semiconductors," Phys. Rev. B54, 2491 (1996).
  14. A. F. Wright and J. S. Nelson, "Consistent structural properties for AlN, GaN and InN," Phys. Rev. B51, 7866 (1995) and references.
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  16. S. H. Wei and A. Zunger, "Valence-band splittings and band offsetsof AlN, GaN and InN," Appl. Phys. Letts. 69, 2719 (1996). [CrossRef]
  17. F. Jain and W. Huang, "Modeling of optical gain in In/gaN-AlGaN and InxGa1 quantum well lasers," IEEE J. Quantum Electron. 32, 859, (1996). [CrossRef]

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