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Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 2, Iss. 4 — Feb. 16, 1998
  • pp: 137–142

High-temperature HgTe/CdTe multiple-quantum-well lasers

I. Vurgaftman and J. R. Meyer  »View Author Affiliations

Optics Express, Vol. 2, Issue 4, pp. 137-142 (1998)

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While most previous studies of Hg-based mid-IR lasers have focused on either bulk Hg1-x Cd x Te alloys or thick (> 100 Å) Hg1-x Cd x Te quantum wells with relatively large x, we show that much thinner (20–30 Å) HgTe binary wells may be engineered to suppress both Auger recombination and intervalence free carrier absorption. On the basis of detailed numerical simulations, we predict 4.3 μm cw emission at temperatures up to 220 K for optical pumping and 105 K for diode operation. In pulsed mode, we expect maximum lasing temperatures more than 100 K higher than any prior Hg-based mid-IR result.

© Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials

ToC Category:
Focus Issue: Quantum well laser design

Original Manuscript: October 8, 1997
Published: February 16, 1998

Igor Vurgaftman and Jerry Meyer, "High-temperature HgTe/CdTe multiple-quantum-well lasers," Opt. Express 2, 137-142 (1998)

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