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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 1 — Jan. 2, 2012
  • pp: 291–298

Enhancement of height resolution in direct laser lithography

Hyug-Gyo Rhee and Yun-Woo Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue 1, pp. 291-298 (2012)

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To address the requirements of multi-level semiconductors, we propose a new technique for overcoming the height limitation of direct laser lithography. In the proposed system, an original source beam is fed into an interference generator that divides the input beam by 50: 50 into two output beams. After going through an imaging lens, these two beams make two focusing spots, which are slightly separated in the axial direction. In the overlapped region, these two spots generate a small interferogram that shortens the depth of focus. By using this phenomenon, we are able to overcome the height limitation of direct laser lithography. The governing equations are also derived in this manuscript by using the Gaussian beam model.

© 2011 OSA

OCIS Codes
(120.4610) Instrumentation, measurement, and metrology : Optical fabrication
(120.4640) Instrumentation, measurement, and metrology : Optical instruments

ToC Category:
Optical Design and Fabrication

Original Manuscript: November 3, 2011
Revised Manuscript: December 1, 2011
Manuscript Accepted: December 2, 2011
Published: December 20, 2011

Hyug-Gyo Rhee and Yun-Woo Lee, "Enhancement of height resolution in direct laser lithography," Opt. Express 20, 291-298 (2012)

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