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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 10470–10475

Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film

Kuang-Yang Kuo, Shu-Wei Hsu, Pin-Ruei Huang, Wen-Ling Chuang, Chuan-Cheng Liu, and Po-Tsung Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue 10, pp. 10470-10475 (2012)

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In this study, we fabricate ZnO thin films with nano-crystalline Si (nc-Si) quantum dots (QDs) using a ZnO/Si multilayer deposition structure and a post-annealing process, and the formation of high crystallinity of Si QDs embedded in the crystalline ZnO matrix is demonstrated. For optical properties, the essential features of ZnO material, high transmission in long-wavelength and high absorption in short-wavelength ranges, are preserved. We observe significantly enhanced light absorption and an unusual photoluminescence emission peak contributed from the nc-Si QDs in the middle-wavelength range. In addition, we confirm the formation of optical sub-bandgap and the obtained value is quite close to the unusual PL emission peak. We show that meaningful sub-bandgap can form in ZnO thin film by embedding nc-Si QDs while maintaining the advantageous properties of ZnO matrix. This newly developed composite material, nc-Si QD embedded ZnO thin films, can be useful for various electro-optical applications.

© 2012 OSA

OCIS Codes
(160.0160) Materials : Materials
(160.3918) Materials : Metamaterials

ToC Category:
Optical Devices

Original Manuscript: January 13, 2012
Revised Manuscript: February 8, 2012
Manuscript Accepted: February 8, 2012
Published: April 20, 2012

Virtual Issues
Quantum Dots for Photonic Applications (2012) Optical Materials Express

Kuang-Yang Kuo, Shu-Wei Hsu, Pin-Ruei Huang, Wen-Ling Chuang, Chuan-Cheng Liu, and Po-Tsung Lee, "Optical properties and sub-bandgap formation of nano-crystalline Si quantum dots embedded ZnO thin film," Opt. Express 20, 10470-10475 (2012)

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