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40 Gbit/s low-loss silicon optical modulator based on a pipin diode |
Optics Express, Vol. 20, Issue 10, pp. 10591-10596 (2012)
http://dx.doi.org/10.1364/OE.20.010591
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Abstract
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.
© 2012 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(200.4650) Optics in computing : Optical interconnects
(230.2090) Optical devices : Electro-optical devices
(130.4110) Integrated optics : Modulators
ToC Category:
Integrated Optics
History
Original Manuscript: February 2, 2012
Revised Manuscript: April 6, 2012
Manuscript Accepted: April 12, 2012
Published: April 24, 2012
Citation
Melissa Ziebell, Delphine Marris-Morini, Gilles Rasigade, Jean-Marc Fédéli, Paul Crozat, Eric Cassan, David Bouville, and Laurent Vivien, "40 Gbit/s low-loss silicon optical modulator based on a pipin diode," Opt. Express 20, 10591-10596 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-10-10591
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