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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 10 — May. 7, 2012
  • pp: 11574–11580

First principles study of Bismuth alloying effects in GaAs saturable absorber

Dechun Li, Ming Yang, Shengzhi Zhao, Yongqing Cai, and Yuanping Feng  »View Author Affiliations

Optics Express, Vol. 20, Issue 10, pp. 11574-11580 (2012)

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First principles hybrid functional calculations have been carried out to study electronic properties of GaAs with Bi alloying effects. It is found that the doping of Bi into GaAs reduces the bandgap due to the intraband level repulsions between Bi induced states and host states, and the Bi-related impurity states originate from the hybridization of Bi-6p and its nearest As-4p orbitals. With the increase of Bi concentration in GaAs, the bandgap decreases monotonously. The calculated optical properties of the undoped and Bi-doped GaAs are similar except the shift toward lower energy of absorption edge and main absorption peaks with Bi doping. These results suggest a promising application of GaBixAs1-x alloy as semiconductor saturable absorber in Q-switched or mode-locked laser.

© 2012 OSA

OCIS Codes
(140.3540) Lasers and laser optics : Lasers, Q-switched
(160.2220) Materials : Defect-center materials
(160.6000) Materials : Semiconductor materials
(190.4400) Nonlinear optics : Nonlinear optics, materials

ToC Category:

Original Manuscript: March 28, 2012
Revised Manuscript: April 29, 2012
Manuscript Accepted: April 30, 2012
Published: May 4, 2012

Dechun Li, Ming Yang, Shengzhi Zhao, Yongqing Cai, and Yuanping Feng, "First principles study of Bismuth alloying effects in GaAs saturable absorber," Opt. Express 20, 11574-11580 (2012)

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