The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption variation in the spectral domain around 1.5 µm. The variation of the refractive index was deduced from the shift of the position of the beating interference maxima of different order modes in a guided wave configuration. The obtained index variation with bias from complete depletion to full population of the quantum wells is around -5 × 10⁻³. This value is similar to the typical index variation achieved in InP and is an order of magnitude higher than the index variation obtained in silicon.

© 2012 OSA

1. N. Suzuki and N. Iizuka, “Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells,” Jpn. J. Appl. Phys.36(Part 2, No. 8A), L1006–L1008 (1997). [CrossRef]
2. C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, “Intersubband absorption at λ ~1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers,” Appl. Phys. Lett.77(23), 3722 (2000). [CrossRef]
3. M. Tchernycheva, L. Nevou, L. Doyennette, F. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele, and M. Albrecht, “Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells,” Phys. Rev. B73(12), 125347 (2006). [CrossRef]
4. N. Iizuka, K. Kaneko, and N. Suzuki, “Sub-picosecond all-optical gate utilizing aN intersubband transition,” Opt. Express13(10), 3835–3840 (2005). [CrossRef] [PubMed]
5. Y. Li, A. Bhattacharyya, C. Thomidis, T. D. Moustakas, and R. Paiella, “Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides,” Opt. Express15(26), 17922–17927 (2007). [CrossRef] [PubMed]
6. E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Leconte, F. Guillot, E. Bellet-Amalric, and E. Monroy, “Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure,” Appl. Phys. Lett.89(10), 101121 (2006). [CrossRef]
7. L. Nevou, N. Kheirodin, M. Tchernycheva, L. Meignien, P. Crozat, A. Lupu, E. Warde, F. H. Julien, G. Pozzovivo, S. Golka, G. Strasser, F. Guillot, E. Monroy, T. Remmele, and M. Albrecht, “Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN/AlN coupled quantum wells,” Appl. Phys. Lett.90(22), 223511 (2007). [CrossRef]
8. N. Kheirodin, L. Nevou, H. Machhadani, P. Crozat, L. Vivien, M. Tchernycheva, A. Lupu, F. H. Julien, G. Pozzovivo, S. Golka, G. Strasser, F. Guillot, and E. Monroy, “Electrooptical modulator at telecommunication wavelengths based on GaN-AlN coupled quantum wells,” IEEE Photon. Technol. Lett.20(9), 724–726 (2008). [CrossRef]
9. H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, and F. H. Julien, “GaN/AlGaN intersubband optoelectronic devices,” New J. Phys.11(12), 125023 (2009). [CrossRef]
10. P. Holmström, “Electroabsorption Modulator Using Intersubband Transitions in GaN–AlGaN–AlN Step Quantum Wells,” IEEE J. Quantum Electron.42(8), 810–819 (2006). [CrossRef]
11. E. B. Dupont, D. Delacourt, and M. Papuchon, “Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells,” IEEE J. Quantum Electron.29(8), 2313–2318 (1993). [CrossRef]
12. L. B. Cen, B. Shen, Z. X. Qin, and G. Y. Zhang, “Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells,” J. Appl. Phys.105(9), 093109 (2009). [CrossRef]
13. Y. Li, A. Bhattacharyya, C. Thomidis, Y. Liao, T. D. Moustakas, and R. Paiella, “Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides,” J. Appl. Phys.104(8), 083101 (2008). [CrossRef]
14. E. Bigan, A. Ougazzaden, F. Huet, M. Carré, A. Carenco, and A. Mircea, “Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide,” Electron. Lett.27(18), 1607–1609 (1991). [CrossRef]
15. E. Bigan, M. Allovon, M. Carré, C. Braud, A. Carenco, and P. Voisin, “Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study,” IEEE J. Quantum Electron.28(1), 214–223 (1992). [CrossRef]
16. A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. le Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum wells structures,” Appl. Phys. Lett.85(6), 887–889 (2004). [CrossRef]
17. L. C. West and S. J. Eglash, “First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well,” Appl. Phys. Lett.46(12), 1156 (1985). [CrossRef]
18. A. Lupu, F. H. Julien, S. Golka, G. Pozzovivo, G. Strasser, E. Baumann, F. Giorgetta, D. Hofstetter, S. Nicolay, M. Mosca, E. Feltin, J.-F. Carlin, and N. Grandjean, “Lattice matched GaN/InAlN waveguides at λ=1.55 µm grown by metalorganic vapor phase epitaxy,” IEEE Photon. Technol. Lett.20(2), 102–104 (2008). [CrossRef]
19. N. Iizuka, K. Kaneko, and N. Suzuki, “Polarization dependent loss in III-nitride optical waveguides for telecommunication devices,” J. Appl. Phys.99(9), 093107 (2006). [CrossRef]
20. P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using Eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001). [CrossRef]
21. http://camfr.sourceforge.net .
22. R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett.82(9), 1326 (2003). [CrossRef]
23. P. Chen, X. G. Tu, S. P. Li, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. H. Zuo, L. Zhao, S. W. Chen, Y. D. Yu, J. Z. Yu, and Q. M. Wang, “Enhanced Pockels effect in GaN/AlxGa1−xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer,” Appl. Phys. Lett.91(3), 031103 (2007). [CrossRef]
24. J. E. Zucker, I. Bar-Jozeph, B. I. Miller, U. Koren, and D. S. Chemla, “Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55µm,” Appl. Phys. Lett.54(1), 10–12 (1989). [CrossRef]
25. J. F. Vinchant, J. A. Cavallès, M. Erman, P. Jarry, and M. Renaud, “InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: Theory and experiment,” J. Lightwave Technol.10(1), 63–70 (1992). [CrossRef]
26. J. P. Weber, “Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters,” IEEE J. Quantum Electron.30(8), 1801–1816 (1994). [CrossRef]
27. R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987). [CrossRef]
28. L. B. Soldano and E. C. M. Pennings, “Optical multi-mode interference devices based on self-imaging: principles and applications,” J. Lightwave Technol.13(4), 615–627 (1995). [CrossRef]
29. M. Åslund, C. M. de Sterke L. Poladian, and J. Canning, “Bragg grating optical add-drop multiplexers,” VDM Verlag Dr. Muller Aktiengesellschaft and Co., Germany (2008).

Appl. Phys. Lett.

• C. Gmachl, H. M. Ng, S.-N. G. Chu, and A. Y. Cho, “Intersubband absorption at λ ~1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers,” Appl. Phys. Lett.77(23), 3722 (2000). [CrossRef]
• E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Leconte, F. Guillot, E. Bellet-Amalric, and E. Monroy, “Electrically adjustable intersubband absorption of a GaN/AlN superlattice grown on a transistorlike structure,” Appl. Phys. Lett.89(10), 101121 (2006). [CrossRef]
• L. Nevou, N. Kheirodin, M. Tchernycheva, L. Meignien, P. Crozat, A. Lupu, E. Warde, F. H. Julien, G. Pozzovivo, S. Golka, G. Strasser, F. Guillot, E. Monroy, T. Remmele, and M. Albrecht, “Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN/AlN coupled quantum wells,” Appl. Phys. Lett.90(22), 223511 (2007). [CrossRef]
• A. Lupu, D. Marris, D. Pascal, J.-L. Cercus, A. Cordat, V. le Thanh, and S. Laval, “Experimental evidence for index modulation by carrier depletion in SiGe/Si multiple quantum wells structures,” Appl. Phys. Lett.85(6), 887–889 (2004). [CrossRef]
• L. C. West and S. J. Eglash, “First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well,” Appl. Phys. Lett.46(12), 1156 (1985). [CrossRef]
• R. Hui, S. Taherion, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, “GaN-based waveguide devices for long-wavelength optical communications,” Appl. Phys. Lett.82(9), 1326 (2003). [CrossRef]
• P. Chen, X. G. Tu, S. P. Li, J. C. Li, W. Lin, H. Y. Chen, D. Y. Liu, J. Y. Kang, Y. H. Zuo, L. Zhao, S. W. Chen, Y. D. Yu, J. Z. Yu, and Q. M. Wang, “Enhanced Pockels effect in GaN/AlxGa1−xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer,” Appl. Phys. Lett.91(3), 031103 (2007). [CrossRef]
• J. E. Zucker, I. Bar-Jozeph, B. I. Miller, U. Koren, and D. S. Chemla, “Quaternary quantum wells for electro-optic intensity and phase modulation at 1.3 and 1.55µm,” Appl. Phys. Lett.54(1), 10–12 (1989). [CrossRef]

Electron. Lett.

• E. Bigan, A. Ougazzaden, F. Huet, M. Carré, A. Carenco, and A. Mircea, “Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide,” Electron. Lett.27(18), 1607–1609 (1991). [CrossRef]

IEEE J. Quantum Electron.

• E. Bigan, M. Allovon, M. Carré, C. Braud, A. Carenco, and P. Voisin, “Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study,” IEEE J. Quantum Electron.28(1), 214–223 (1992). [CrossRef]
• J. P. Weber, “Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters,” IEEE J. Quantum Electron.30(8), 1801–1816 (1994). [CrossRef]
• R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987). [CrossRef]
• P. Holmström, “Electroabsorption Modulator Using Intersubband Transitions in GaN–AlGaN–AlN Step Quantum Wells,” IEEE J. Quantum Electron.42(8), 810–819 (2006). [CrossRef]
• E. B. Dupont, D. Delacourt, and M. Papuchon, “Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells,” IEEE J. Quantum Electron.29(8), 2313–2318 (1993). [CrossRef]

IEEE Photon. Technol. Lett.

• A. Lupu, F. H. Julien, S. Golka, G. Pozzovivo, G. Strasser, E. Baumann, F. Giorgetta, D. Hofstetter, S. Nicolay, M. Mosca, E. Feltin, J.-F. Carlin, and N. Grandjean, “Lattice matched GaN/InAlN waveguides at λ=1.55 µm grown by metalorganic vapor phase epitaxy,” IEEE Photon. Technol. Lett.20(2), 102–104 (2008). [CrossRef]
• N. Kheirodin, L. Nevou, H. Machhadani, P. Crozat, L. Vivien, M. Tchernycheva, A. Lupu, F. H. Julien, G. Pozzovivo, S. Golka, G. Strasser, F. Guillot, and E. Monroy, “Electrooptical modulator at telecommunication wavelengths based on GaN-AlN coupled quantum wells,” IEEE Photon. Technol. Lett.20(9), 724–726 (2008). [CrossRef]

J. Appl. Phys.

• N. Iizuka, K. Kaneko, and N. Suzuki, “Polarization dependent loss in III-nitride optical waveguides for telecommunication devices,” J. Appl. Phys.99(9), 093107 (2006). [CrossRef]
• L. B. Cen, B. Shen, Z. X. Qin, and G. Y. Zhang, “Influence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells,” J. Appl. Phys.105(9), 093109 (2009). [CrossRef]
• Y. Li, A. Bhattacharyya, C. Thomidis, Y. Liao, T. D. Moustakas, and R. Paiella, “Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides,” J. Appl. Phys.104(8), 083101 (2008). [CrossRef]

J. Lightwave Technol.

• L. B. Soldano and E. C. M. Pennings, “Optical multi-mode interference devices based on self-imaging: principles and applications,” J. Lightwave Technol.13(4), 615–627 (1995). [CrossRef]
• J. F. Vinchant, J. A. Cavallès, M. Erman, P. Jarry, and M. Renaud, “InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: Theory and experiment,” J. Lightwave Technol.10(1), 63–70 (1992). [CrossRef]

Jpn. J. Appl. Phys.

• N. Suzuki and N. Iizuka, “Feasibility study on ultrafast nonlinear optical properties of 1.55-μm intersubband transition in AlGaN/GaN quantum wells,” Jpn. J. Appl. Phys.36(Part 2, No. 8A), L1006–L1008 (1997). [CrossRef]

New J. Phys.

• H. Machhadani, P. Kandaswamy, S. Sakr, A. Vardi, A. Wirtmüller, L. Nevou, F. Guillot, G. Pozzovivo, M. Tchernycheva, A. Lupu, L. Vivien, P. Crozat, E. Warde, C. Bougerol, S. Schacham, G. Strasser, G. Bahir, E. Monroy, and F. H. Julien, “GaN/AlGaN intersubband optoelectronic devices,” New J. Phys.11(12), 125023 (2009). [CrossRef]

Opt. Express

• N. Iizuka, K. Kaneko, and N. Suzuki, “Sub-picosecond all-optical gate utilizing aN intersubband transition,” Opt. Express13(10), 3835–3840 (2005). [CrossRef] [PubMed]
• Y. Li, A. Bhattacharyya, C. Thomidis, T. D. Moustakas, and R. Paiella, “Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides,” Opt. Express15(26), 17922–17927 (2007). [CrossRef] [PubMed]

Opt. Quantum Electron.

• P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using Eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001). [CrossRef]

Phys. Rev. B

• M. Tchernycheva, L. Nevou, L. Doyennette, F. Julien, E. Warde, F. Guillot, E. Monroy, E. Bellet-Amalric, T. Remmele, and M. Albrecht, “Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells,” Phys. Rev. B73(12), 125347 (2006). [CrossRef]

Other

• http://camfr.sourceforge.net .
• M. Åslund, C. M. de Sterke L. Poladian, and J. Canning, “Bragg grating optical add-drop multiplexers,” VDM Verlag Dr. Muller Aktiengesellschaft and Co., Germany (2008).

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