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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 12 — Jun. 4, 2012
  • pp: 13425–13439

Mode conversion in tapered submicron silicon ridge optical waveguides

Daoxin Dai, Yongbo Tang, and John E Bowers  »View Author Affiliations


Optics Express, Vol. 20, Issue 12, pp. 13425-13439 (2012)
http://dx.doi.org/10.1364/OE.20.013425


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Abstract

The mode conversion in tapered submicron silicon ridge optical waveguides is investigated theoretically and experimentally. Two types of optical waveguide tapers are considered in this paper. One is a regular lateral taper for which the waveguide width varies while the etching depth is kept the same. The other is a so-called “bi-level” taper, which includes two layers of lateral tapers. Mode conversion between the TM fundamental mode and higher-order TE modes is observed in tapered submicron silicon-on-insulator ridge optical waveguides due to the mode hybridization resulting from the asymmetry of the cross section. Such a mode conversion could have a very high efficiency (close to 100%) when the taper is designed appropriately. This enables some applications e.g. polarizer, polarization splitting/rotation, etc. It is also shown that this kind of mode conversion could be depressed by carefully choosing the taper parameters (like the taper width, the etching depth, etc), which is important for the applications when low-loss propagation for the TM fundamental mode is needed.

© 2012 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(230.5440) Optical devices : Polarization-selective devices

ToC Category:
Integrated Optics

History
Original Manuscript: April 9, 2012
Revised Manuscript: May 19, 2012
Manuscript Accepted: May 22, 2012
Published: May 31, 2012

Citation
Daoxin Dai, Yongbo Tang, and John E Bowers, "Mode conversion in tapered submicron silicon ridge optical waveguides," Opt. Express 20, 13425-13439 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-12-13425


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