Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

doi:10.1364/OE.20.015247

Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, and Tatsuo Okada »View Author Affiliations

Optics Express, Vol. 20, Issue 14, pp. 15247-15252 (2012)
http://dx.doi.org/10.1364/OE.20.015247

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Abstract

The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P⁺) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm². It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(160.6000) Materials : Semiconductor materials
(160.4236) Materials : Nanomaterials
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Laser Microfabrication

History
Original Manuscript: April 3, 2012
Revised Manuscript: June 3, 2012
Manuscript Accepted: June 7, 2012
Published: June 22, 2012

Citation
Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, and Tatsuo Okada, "Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods," Opt. Express 20, 15247-15252 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-14-15247

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References

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process.93(4), 843–847 (2008).
S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett.84(17), 3241–3243 (2004).
E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater. 18(13), 1685–1688 (2006).
S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol.6(8), 506–510 (2011).
K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett.97(1), 013501 (2010).
M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett.10(11), 4387–4393 (2010).
X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett.95(13), 133124 (2009).
V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys.98(4), 043519 (2005).
T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B229(2), 911–914 (2002).
E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces3(6), 1974–1979 (2011).
D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE7940, 990–992 (2011).
K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E40(7), 2489–2493 (2008).
A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett.87, 122102 (2005).
Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys.97, 013528 (2005).
J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology20(9), 095203 (2009).
L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys.109(12), 121301 (2011).
Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys.103(11), 114903 (2008). [CrossRef]

Akasaka, S.
Amaike, H.
Aoki, T.
Brillson, L. J.
Chang, Y. C.
Chatterjee, J.
Chen, L. J.
Chen, M. T.
Chen, Z. Q.
Chernyak, L.
Chichibu, S. F.
Choe, M.
Chou, L. J.
Chu, S.
DasGupta, N.
Dong, Z. L.
Fujii, T.
Fukuyama, A.
Guo, R. Q.
Hatanaka, Y.
Heo, S.
Higashihata, M.
Hwang, H.
Ikari, T.
Janotti, A.
Jiang, Y.
Jo, G.
Kawasaki, M.
Kawasuso, A.
Kim, S.
Kim, S. S.
Kong, J.
Kubo, K.
Kumar, E. S.
Kumeda, A.
Lau, S. P.
Lee, B. T.
Lee, C. Y.
Lee, T.
Leong, E. S. P.
Li, L.
Li, X. C.
Lin, Y.
Ling, B.
Liu, J.
Lu, M. P.
Lu, M. Y.
Lu, Y.
Maeng, J.
Matsumoto, M.
Miyake, A.
Nakahara, K.
Nakamura, A.
Nakamura, D.
Nakanishi, Y.
Nishimoto, Y.
Nishimura, J.
Noguchi, K.
Ohdaira, T.
Ohtomo, A.
Okada, T.
Okazaki, K.
Onuma, T.
Oyama, S.
Park, W. I.
Rama, N.
Rao, M. S. R.
Ren, J.
Sakai, K.
Sasaki, A.
Sekiguchi, T.
Shen, Y. Q.
Shimizu, Y.
Song, J.
Sun, X. W.
Suzuki, R.
Takamizu, D.
Takasu, H.
Tamura, K.
Tan, S. T.
Tanabe, T.
Toya, K.
Tsukazaki, A.
Tsuta, K.
Vaithianathan, V.
Walle, C. G. V. d.
Wang, G.
Wang, Z. L.
Wu, Y. J.
Xu, Y.
Yan, H. N. H.
Yang, Y.
Yi, G. C.
Yu, S. F.
Yuan, X. L.
Yuen, C.
Yuji, H.
Zhao, J.
Zhao, J. L.
Zhao, Y.
Zhou, W.

ACS Appl. Mater. Interfaces

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces3(6), 1974–1979 (2011).

Adv. Mater.

E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater. 18(13), 1685–1688 (2006).

Appl. Phys. Lett.

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett.84(17), 3241–3243 (2004).
K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett.97(1), 013501 (2010).
X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett.95(13), 133124 (2009).
A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett.87, 122102 (2005).

Appl. Phys., A Mater. Sci. Process.

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process.93(4), 843–847 (2008).

J. Appl. Phys.

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys.98(4), 043519 (2005).
Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys.97, 013528 (2005).
L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys.109(12), 121301 (2011).
Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys.103(11), 114903 (2008). [CrossRef]

Nano Lett.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett.10(11), 4387–4393 (2010).

Nanotechnology

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology20(9), 095203 (2009).

Nat. Nanotechnol.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol.6(8), 506–510 (2011).

Phys. Status Solidi B

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B229(2), 911–914 (2002).

Physica E

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E40(7), 2489–2493 (2008).

Proc. SPIE

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE7940, 990–992 (2011).

2011, Chu, Nat. Nanotechnol.
2011, Kumar, ACS Appl. Mater. Interfaces
2011, Nakamura, Proc. SPIE
2011, Brillson, J. Appl. Phys.
2010, Nakahara, Appl. Phys. Lett.
2010, Chen, Nano Lett.
2009, Sun, Appl. Phys. Lett.
2009, Maeng, Nanotechnology
2008, Guo, Appl. Phys., A Mater. Sci. Process.
2008, Zhao, J. Appl. Phys.
2008, Sakai, Physica E
2006, Leong, Adv. Mater.
2005, Janotti, Appl. Phys. Lett.
2005, Chen, J. Appl. Phys.
2005, Vaithianathan, J. Appl. Phys.
2004, Yu, Appl. Phys. Lett.
2002, Aoki, Phys. Status Solidi B

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[1] R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process.93(4), 843–847 (2008).

[2] S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett.84(17), 3241–3243 (2004).

[3] E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater. 18(13), 1685–1688 (2006).

[4] S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol.6(8), 506–510 (2011).

[5] K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett.97(1), 013501 (2010).

[6] M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett.10(11), 4387–4393 (2010).

[7] X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett.95(13), 133124 (2009).

[8] V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys.98(4), 043519 (2005).

[9] T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B229(2), 911–914 (2002).

[10] E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces3(6), 1974–1979 (2011).

[11] D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE7940, 990–992 (2011).

[12] K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E40(7), 2489–2493 (2008).

[13] A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett.87, 122102 (2005).

[14] Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys.97, 013528 (2005).

[15] J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology20(9), 095203 (2009).

[16] L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys.109(12), 121301 (2011).

[17] Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys.103(11), 114903 (2008). [CrossRef]

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Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

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Abstract

References

ACS Appl. Mater. Interfaces

Adv. Mater.

Appl. Phys. Lett.

Appl. Phys., A Mater. Sci. Process.

J. Appl. Phys.

Nano Lett.

Nanotechnology

Nat. Nanotechnol.

Phys. Status Solidi B

Physica E

Proc. SPIE

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