Actinic microscope for extreme ultraviolet lithography photomask inspection and review

doi:10.1364/OE.20.015752

Actinic microscope for extreme ultraviolet lithography photomask inspection and review

Michael Goldstein and Patrick Naulleau »View Author Affiliations

Optics Express, Vol. 20, Issue 14, pp. 15752-15768 (2012)
http://dx.doi.org/10.1364/OE.20.015752

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Abstract
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Abstract

Two dual-configuration extreme ultraviolet (EUV, 13.5nm wavelength) optical designs are described as a means to overcome principal EUV photomask metrology challenges. Semiconductor industry-wide efforts to define performance requirements and create standalone tools that can be used to discover, review, and accurately locate phase, amplitude, and mask pattern defects are described. The reference designs co-optimize low and high magnification configurations for orthogonal chief ray planes to avoid inspection and review trade-offs and emulate the aerial image of a lithography scanner.

OCIS Codes
(220.3620) Optical design and fabrication : Lens system design
(340.7480) X-ray optics : X-rays, soft x-rays, extreme ultraviolet (EUV)
(110.4235) Imaging systems : Nanolithography

ToC Category:
Optical Design and Fabrication

History
Original Manuscript: March 21, 2012
Revised Manuscript: May 4, 2012
Manuscript Accepted: June 15, 2012
Published: June 27, 2012

Citation
Michael Goldstein and Patrick Naulleau, "Actinic microscope for extreme ultraviolet lithography photomask inspection and review," Opt. Express 20, 15752-15768 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-14-15752

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References

S. Wurm and K. Ronse, presented at the 2009 International Symposium on Extreme Ultraviolet Lithography, Prague, Czech Republic (2009).
M. Goldstein, R. Hudyma, P. Naulleau, and S. Wurm, “Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography,” Opt. Lett.33(24), 2995–2997 (2008). [CrossRef] [PubMed]
P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, G. Jones, C. Koh, B. L. Fontaine, A. Ma, W. Montgomery, D. Niakoula, J.- Park, T. Wallow, and S. Wurm, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng.86(4-6), 448–455 (2009). [CrossRef]
Y. A. Shroff, M. Leeson, P. Y. Yan, E. Gullikson, and F. Salmassi, “High transmission pellicles for extreme ultraviolet lithography reticle protection,” J. Vac. Sci. Technol. B28, C6E36 (2010).
Y. A. Shroff, M. Goldstein, B. Rice, S. H. Lee, K. V. Ravi, and D. Tanzil, “EUV pellicle development for mask defect control,” Proc. SPIE6151, 1–10 (2006).
E. Gallagher, K. Badger, L. Kindt, M. Lawliss, G. McIntyre, A. Wagner, and J. Whang, “EUV masks: ready or not?” 2011 International Symposium on Extreme Ultraviolet Lithography, Miami, Florida (USA).
M. Goldstein, D. Chan, A. Ma, K. Kimmel, S. Wurm, J. Harris-Jones, C. Lin, V. Jindal, A. John, and H. Kwon, “Update from the SEMATECH EUV Mask Infrastructure Initiative,” 2011 International Symposium on Extreme Ultraviolet Lithography, Miami, Florida (USA).
T. Yamane, T. Tanaka, T. Terasawa, and O. Suga, “Improvement of actinic blank inspection and phase defect analysis,” Proc. SPIE7823, 1–8 (2010).
T. Yamane, T. Tanaka, T. Terasawa, and O. Suga, “Phase defect analysis with actinic full-field EUVL mask blank inspection,” Proc. SPIE8166, 81660 G 1–8 (2011).
F. Brizuela, S. Carbajo, A. Sakdinawat, D. Alessi, D. H. Martz, Y. Wang, B. Luther, K. A. Goldberg, I. Mochi, D. T. Attwood, B. La Fontaine, J. J. Rocca, and C. S. Menoni, “Extreme ultraviolet laser-based table-top aerial image metrology of lithographic masks,” Opt. Express18(14), 14467–14473 (2010). [CrossRef] [PubMed]
K. A. Goldberg, P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B26(6), 2220–2224 (2008). [CrossRef]
K. A. Goldberg and I. Mochi, “Actinic characterization of extreme ultraviolet bump-type phase defects,” J. Vac. Sci. Technol. B29(6), 06F502 (2011). [CrossRef]
AIMS is a registered trademark of Carl Zeiss SMT AG.
S. Mangan, R. Jonckheere, D. Van den Heuvel, M. Rozentsvige, V. Kudriashov, R. Brikman, L. Shoval, G. Santoro, and I. Englard, “EUV mask defectivity study by existing DUV tools and new E-beam technology,” Proc. SPIE7823, 1–11 (2010).
D. Wack, Y. Xiong, and G. Inderhees, “Solutions for EUV mask and blank inspections,” presented at the 2011 International Symposium on Extreme Ultraviolet Lithography, Miami FL, USA (2011).
D. A. Tichenor, G. D. Kubiak, M. E. Malinowski, R. H. Stulen, S. J. Haney, K. W. Berger, R. P. Nissen, G. A. Wilkerson, P. H. Paul, S. R. Birtola, P. S. Jin, R. W. Arling, A. K. Ray-Chaudhuri, W. C. Sweatt, W. W. Chow, J. E. Bjorkholm, R. R. Freeman, M. D. Himel, A. A. MacDowell, D. M. Tennant, L. A. Fetter, O. R. Wood, W. K. Waskiewicz, D. L. White, D. L. Windt, and T. E. Jewell, “Development of a Laboratory Extreme-Ultraviolet Lithography Tool,” Proc. SPIE2194, 95–105 (1994). [CrossRef]
D. Hellweg, J. Ruoff, A. Herkommer, J. Stühler, T. Ihl, H. Feldmann, M. Ringel, U. Strößner, S. Perlitz, and W. Harnisch, “AIMS EUV: the actinic aerial image review platform for EUV masks,” Proc. SPIE7969, 1–10 (2011).
A. K.-K. Wong, Optical Imaging in Projection Microlithography (SPIE Press, 2005).
http://www.e2v.com
S. Jeong, L. Johnson, S. Rekawa, C. C. Walton, S. T. Prisbrey, E. Tejnil, J. H. Underwood, and J. Bokor, “Actinic detection of sub-100nm defects on extreme ultraviolet lithography mask blanks,” J. Vac. Sci. Technol. B17(6), 3009–3013 (1999). [CrossRef]

Alessi, D.
Anderson, C. N.
Anderson, E. H.
Arling, R. W.
Attwood, D. T.
Berger, K. W.
Birtola, S. R.
Bjorkholm, J. E.
Bokor, J.
Brikman, R.
Brizuela, F.
Carbajo, S.
Chiu, J.
Chow, W. W.
Denham, P.
Englard, I.
Feldmann, H.
Fetter, L. A.
Fontaine, B. L.
Freeman, R. R.
George, S.
Goldberg, K. A.
Goldstein, M.
Gullikson, E.
Gunion, R. F.
Han, H.-S.
Haney, S. J.
Harnisch, W.
Hellweg, D.
Herkommer, A.
Himel, M. D.
Hoef, B.
Hudyma, R.
Huh, S.
Ihl, T.
Jeong, S.
Jewell, T. E.
Jin, P. S.
Johnson, L.
Jonckheere, R.
Jones, G.
Kemp, C. D.
Koh, C.
Kubiak, G. D.
Kudriashov, V.
La Fontaine, B.
Lee, S. H.
Leeson, M.
Luther, B.
Ma, A.
MacDowell, A. A.
Malinowski, M. E.
Mangan, S.
Martz, D. H.
Menoni, C. S.
Mochi, I.
Montgomery, W.
Naulleau, P.
Naulleau, P. P.
Niakoula, D.
Nissen, R. P.
Park, J.-
Paul, P. H.
Perlitz, S.
Prisbrey, S. T.
Ravi, K. V.
Ray-Chaudhuri, A. K.
Rekawa, S.
Rekawa, S. B.
Rice, B.
Ringel, M.
Rocca, J. J.
Rozentsvige, M.
Ruoff, J.
Sakdinawat, A.
Salmassi, F.
Santoro, G.
Shoval, L.
Shroff, Y. A.
Strößner, U.
Stühler, J.
Stulen, R. H.
Suga, O.
Sweatt, W. C.
Tanaka, T.
Tanzil, D.
Tejnil, E.
Tennant, D. M.
Terasawa, T.
Tichenor, D. A.
Underwood, J. H.
Van den Heuvel, D.
Wallow, T.
Walton, C. C.
Wang, Y.
Waskiewicz, W. K.
White, D. L.
Wilkerson, G. A.
Windt, D. L.
Wood, O. R.
Wurm, S.
Yamane, T.
Yan, P. Y.

J. Vac. Sci. Technol. B

Y. A. Shroff, M. Leeson, P. Y. Yan, E. Gullikson, and F. Salmassi, “High transmission pellicles for extreme ultraviolet lithography reticle protection,” J. Vac. Sci. Technol. B28, C6E36 (2010).
K. A. Goldberg, P. Naulleau, I. Mochi, E. H. Anderson, S. B. Rekawa, C. D. Kemp, R. F. Gunion, H.-S. Han, and S. Huh, “Actinic extreme ultraviolet mask inspection beyond 0.25 numerical aperture,” J. Vac. Sci. Technol. B26(6), 2220–2224 (2008). [CrossRef]
K. A. Goldberg and I. Mochi, “Actinic characterization of extreme ultraviolet bump-type phase defects,” J. Vac. Sci. Technol. B29(6), 06F502 (2011). [CrossRef]
S. Jeong, L. Johnson, S. Rekawa, C. C. Walton, S. T. Prisbrey, E. Tejnil, J. H. Underwood, and J. Bokor, “Actinic detection of sub-100nm defects on extreme ultraviolet lithography mask blanks,” J. Vac. Sci. Technol. B17(6), 3009–3013 (1999). [CrossRef]

Microelectron. Eng.

P. P. Naulleau, C. N. Anderson, J. Chiu, P. Denham, S. George, K. A. Goldberg, M. Goldstein, B. Hoef, R. Hudyma, G. Jones, C. Koh, B. L. Fontaine, A. Ma, W. Montgomery, D. Niakoula, J.- Park, T. Wallow, and S. Wurm, “22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool,” Microelectron. Eng.86(4-6), 448–455 (2009). [CrossRef]

Opt. Express

F. Brizuela, S. Carbajo, A. Sakdinawat, D. Alessi, D. H. Martz, Y. Wang, B. Luther, K. A. Goldberg, I. Mochi, D. T. Attwood, B. La Fontaine, J. J. Rocca, and C. S. Menoni, “Extreme ultraviolet laser-based table-top aerial image metrology of lithographic masks,” Opt. Express18(14), 14467–14473 (2010). [CrossRef] [PubMed]

Opt. Lett.

M. Goldstein, R. Hudyma, P. Naulleau, and S. Wurm, “Extreme-ultraviolet microexposure tool at 0.5 NA for sub-16 nm lithography,” Opt. Lett.33(24), 2995–2997 (2008). [CrossRef] [PubMed]

Proc. SPIE

T. Yamane, T. Tanaka, T. Terasawa, and O. Suga, “Improvement of actinic blank inspection and phase defect analysis,” Proc. SPIE7823, 1–8 (2010).
T. Yamane, T. Tanaka, T. Terasawa, and O. Suga, “Phase defect analysis with actinic full-field EUVL mask blank inspection,” Proc. SPIE8166, 81660 G 1–8 (2011).
Y. A. Shroff, M. Goldstein, B. Rice, S. H. Lee, K. V. Ravi, and D. Tanzil, “EUV pellicle development for mask defect control,” Proc. SPIE6151, 1–10 (2006).
D. A. Tichenor, G. D. Kubiak, M. E. Malinowski, R. H. Stulen, S. J. Haney, K. W. Berger, R. P. Nissen, G. A. Wilkerson, P. H. Paul, S. R. Birtola, P. S. Jin, R. W. Arling, A. K. Ray-Chaudhuri, W. C. Sweatt, W. W. Chow, J. E. Bjorkholm, R. R. Freeman, M. D. Himel, A. A. MacDowell, D. M. Tennant, L. A. Fetter, O. R. Wood, W. K. Waskiewicz, D. L. White, D. L. Windt, and T. E. Jewell, “Development of a Laboratory Extreme-Ultraviolet Lithography Tool,” Proc. SPIE2194, 95–105 (1994). [CrossRef]
D. Hellweg, J. Ruoff, A. Herkommer, J. Stühler, T. Ihl, H. Feldmann, M. Ringel, U. Strößner, S. Perlitz, and W. Harnisch, “AIMS EUV: the actinic aerial image review platform for EUV masks,” Proc. SPIE7969, 1–10 (2011).
S. Mangan, R. Jonckheere, D. Van den Heuvel, M. Rozentsvige, V. Kudriashov, R. Brikman, L. Shoval, G. Santoro, and I. Englard, “EUV mask defectivity study by existing DUV tools and new E-beam technology,” Proc. SPIE7823, 1–11 (2010).

Other

D. Wack, Y. Xiong, and G. Inderhees, “Solutions for EUV mask and blank inspections,” presented at the 2011 International Symposium on Extreme Ultraviolet Lithography, Miami FL, USA (2011).
A. K.-K. Wong, Optical Imaging in Projection Microlithography (SPIE Press, 2005).
http://www.e2v.com
AIMS is a registered trademark of Carl Zeiss SMT AG.
E. Gallagher, K. Badger, L. Kindt, M. Lawliss, G. McIntyre, A. Wagner, and J. Whang, “EUV masks: ready or not?” 2011 International Symposium on Extreme Ultraviolet Lithography, Miami, Florida (USA).
M. Goldstein, D. Chan, A. Ma, K. Kimmel, S. Wurm, J. Harris-Jones, C. Lin, V. Jindal, A. John, and H. Kwon, “Update from the SEMATECH EUV Mask Infrastructure Initiative,” 2011 International Symposium on Extreme Ultraviolet Lithography, Miami, Florida (USA).
S. Wurm and K. Ronse, presented at the 2009 International Symposium on Extreme Ultraviolet Lithography, Prague, Czech Republic (2009).

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